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13 July 2016
- 19:3619:36, 13 July 2016 diff hist +184 AlGaN/GaN HEMT - chemical sensors No edit summary
- 19:3519:35, 13 July 2016 diff hist +143 N File:PRiMESubmissionFigure3.png Figure 3. Simulated results of peak sensitivity (mA/mm-pH) as a function of drain voltage, VDS, for a 1um gate length AlGaN/GaN HEMT pH sensor. current
- 19:3419:34, 13 July 2016 diff hist +5 AlGaN/GaN HEMT - chemical sensors No edit summary
- 19:3319:33, 13 July 2016 diff hist +1 AlGaN/GaN HEMT - chemical sensors No edit summary
- 19:3319:33, 13 July 2016 diff hist +501 AlGaN/GaN HEMT - chemical sensors No edit summary
- 19:3219:32, 13 July 2016 diff hist +463 N File:PRiMESubmissionFigure2.png Figure 2. a) Drain current versus pH with varied drain bias ranging from 1 V to 5 V with a 1 V increment for a 1um gate length device. b) Corresponding sensitivity versus pH. c) Corresponding percent of available surface charge at the gate contact vs. current
- 19:3019:30, 13 July 2016 diff hist +1,474 AlGaN/GaN HEMT - chemical sensors →Optimization of GaN-based HEMTs for Chemical Sensing: A Simulation Study
- 18:1718:17, 13 July 2016 diff hist +64 AlGaN/GaN HEMT - chemical sensors No edit summary
- 18:1518:15, 13 July 2016 diff hist +113 AlGaN/GaN HEMT - chemical sensors No edit summary
- 18:1318:13, 13 July 2016 diff hist +72 N AlGaN/GaN HEMT - chemical sensors Created page with "Optimization of GaN-based HEMTs for Chemical Sensing: A Simulation Study"
24 May 2015
- 14:4814:48, 24 May 2015 diff hist +134 N Madeline Sciullo Created page with "Madeline Sciullo - 2015 - madelinesciullo@ufl.edu Process Simulation: Carbon Model Development Device Simulation: SRH PN Diode (1D)"
- 14:4714:47, 24 May 2015 diff hist +86 Manual →Ph.D Students
- 14:4614:46, 24 May 2015 diff hist −15 Manual →Ph.D Students
- 14:4514:45, 24 May 2015 diff hist +66 Manual →Ph.D Students
- 14:4414:44, 24 May 2015 diff hist +13,837 N SRH PN Diode (1D) - full deck Created page with "Step 1: Build a one dimensional silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um. Think c..." current
- 14:4014:40, 24 May 2015 diff hist +37 Device Examples →P-N Diode
6 May 2015
- 18:4818:48, 6 May 2015 diff hist −1 Model Development Solution No edit summary current
- 18:4818:48, 6 May 2015 diff hist −2 Model Development Solution No edit summary
- 18:4818:48, 6 May 2015 diff hist +4 Model Development Solution No edit summary
- 18:4818:48, 6 May 2015 diff hist −37 Model Development Solution No edit summary
- 18:4718:47, 6 May 2015 diff hist +3 Model Development Solution No edit summary
- 18:4718:47, 6 May 2015 diff hist +1,002 N Model Development Solution Created page with "el Development - simple diffusion Build a simple model for carbon diffusion in silicon. Use a constant diffusivity: Dc = 1.0 * exp(-3.5 / kT) Set the initial carbon profile to: C..."
- 18:4718:47, 6 May 2015 diff hist +9 Process Examples →Model Development current
- 18:0518:05, 6 May 2015 diff hist +43 Process Examples →Model Development
5 May 2015
- 17:1717:17, 5 May 2015 diff hist +49 User talk:Maddie →Carbon Model Development Solutions current
- 17:1717:17, 5 May 2015 diff hist +121 N File:900 C for 60min Part 2.png Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 900 degrees Celsius for 60 minutes current
- 17:1617:16, 5 May 2015 diff hist +122 N File:1000C for 30 min Part 2.png Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 1000 degrees Celsius for 30 minutes current
- 17:1517:15, 5 May 2015 diff hist +122 N File:1100 C for 10 mins Part 2.png Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 1100 degrees Celsius for 10 minutes current
- 17:1417:14, 5 May 2015 diff hist +54 User talk:Maddie →Carbon Model Development Solutions
- 17:1417:14, 5 May 2015 diff hist +122 N File:1100C for 10 mins Part 1.png Model Development Solutions Part 1 Implant profile for Carbon diffusion in Silicon at 1100 degrees Celsius for 10 minutes current
- 17:1317:13, 5 May 2015 diff hist +115 N File:1000 C for 30 mins Part 1.png Model Development Solutions Implant profile for Carbon diffusion in Silicon at 1000 degrees Celsius for 30 minutes current
- 17:1217:12, 5 May 2015 diff hist +114 N File:900 C for 60mins Part 1.png Model Development Solutions Implant profile for Carbon diffusion in Silicon at 900 degrees Celsius for 60 minutes current
- 17:0517:05, 5 May 2015 diff hist −23 User talk:Maddie No edit summary
- 17:0517:05, 5 May 2015 diff hist +59 User talk:Maddie →Simple Diode I-V Solutions: new section
- 17:0417:04, 5 May 2015 diff hist +355 User talk:Maddie →Carbon Model Development Solutions
- 17:0217:02, 5 May 2015 diff hist +591 User talk:Maddie →Carbon Model Development Solutions: new section
- 16:4416:44, 5 May 2015 diff hist −2 User talk:Maddie No edit summary
- 16:4316:43, 5 May 2015 diff hist +1,277 User talk:Maddie No edit summary
- 16:4016:40, 5 May 2015 diff hist +97 User talk:Maddie No edit summary
- 16:4016:40, 5 May 2015 diff hist +118 N File:Transient with SRH lifetimes of e-6.png Process Examples - Simple Diode Transient plot of I-V for diode with SRH generation recombination lifetime of 1e-6 s. current
- 16:3916:39, 5 May 2015 diff hist +119 N File:Transient with SRH lifetime e-11.png Process Examples - Simple Diode Transient plot of I-V for diode with SRH generation recombination lifetime of 1e-11 s. current
- 16:3116:31, 5 May 2015 diff hist +82 User talk:Maddie No edit summary
- 16:2016:20, 5 May 2015 diff hist +6,423 User talk:Maddie No edit summary
- 15:5515:55, 5 May 2015 diff hist +39 User talk:Maddie No edit summary
- 15:5515:55, 5 May 2015 diff hist +191 N File:Gaussian Implant Profile.png Process Examples - Simple Diode Implant Profile of silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um. current
- 15:4515:45, 5 May 2015 diff hist +4 User talk:Maddie No edit summary
- 15:4515:45, 5 May 2015 diff hist +4,710 User talk:Maddie No edit summary
- 15:3115:31, 5 May 2015 diff hist +99 N File:Transient 0.5e-10 without SRH.png Process Examples - Simple Diode First part, transient analysis of IV curve at time 0.5e-10 seconds. current
- 15:2415:24, 5 May 2015 diff hist +432 User talk:Maddie No edit summary
- 15:2315:23, 5 May 2015 diff hist +351 N User talk:Maddie Created page with "Diode - simple IV Build a one dimensional silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um..."