Uploads by Maddie

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Date Name Thumbnail Size Description Versions
23:31, 15 July 2016 Poisson.pdf (file) 39 KB Header file for hemt_ph script; PRiME 2016 Submission for AlGaN/GaN HEMT Chemical Sensor. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law. 1
23:27, 15 July 2016 Poission.pdf (file) 39 KB Header file fro hemt_ph script; PRiME 2016 submission AlGaN/GaN HEMT Chemical Sensors. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law. 1
23:24, 15 July 2016 Continuity.pdf (file) 32 KB Header file for hemt_ph script; PRiME 2016 Submission AlGaN/GaN chemical sensors. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law. 1
23:20, 15 July 2016 GaN modelfile mo.pdf (file) 60 KB GaN model file for the heat_ph deck for the PRiME 2016 submission. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law. 1
23:17, 15 July 2016 Hemt ph.pdf (file) 70 KB Tutorial script for the AlGaN/GaN HEMT chemical sensor. PRiME conference 2016 - Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law. 1
19:48, 13 July 2016 PRiMESubmissionFigure5.png (file)
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58 KB Figure 5. Simulated sensitivity (mA/mm-pH) as a function of pH for varying gate lengths (0.5 m to 3.0 m) at a constant drain bias, VDS, of 5.0 V. 1
19:47, 13 July 2016 PRiMESubmissionFigure4.png (file)
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101 KB Figure 4. Simulated sensitivity (mA/mm-pH) as a function of pH for varying gate lengths (1.0 m to 10.0 m) at a constant drain bias, VDS, of 2.0 V. 1
19:35, 13 July 2016 PRiMESubmissionFigure3.png (file)
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34 KB Figure 3. Simulated results of peak sensitivity (mA/mm-pH) as a function of drain voltage, VDS, for a 1um gate length AlGaN/GaN HEMT pH sensor. 1
19:32, 13 July 2016 PRiMESubmissionFigure2.png (file)
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135 KB Figure 2. a) Drain current versus pH with varied drain bias ranging from 1 V to 5 V with a 1 V increment for a 1um gate length device. b) Corresponding sensitivity versus pH. c) Corresponding percent of available surface charge at the gate contact vs. 1
17:17, 5 May 2015 900 C for 60min Part 2.png (file)
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45 KB Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 900 degrees Celsius for 60 minutes 1
17:16, 5 May 2015 1000C for 30 min Part 2.png (file)
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45 KB Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 1000 degrees Celsius for 30 minutes 1
17:15, 5 May 2015 1100 C for 10 mins Part 2.png (file)
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48 KB Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 1100 degrees Celsius for 10 minutes 1
17:14, 5 May 2015 1100C for 10 mins Part 1.png (file)
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46 KB Model Development Solutions Part 1 Implant profile for Carbon diffusion in Silicon at 1100 degrees Celsius for 10 minutes 1
17:13, 5 May 2015 1000 C for 30 mins Part 1.png (file)
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46 KB Model Development Solutions Implant profile for Carbon diffusion in Silicon at 1000 degrees Celsius for 30 minutes 1
17:12, 5 May 2015 900 C for 60mins Part 1.png (file)
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44 KB Model Development Solutions Implant profile for Carbon diffusion in Silicon at 900 degrees Celsius for 60 minutes 1
16:40, 5 May 2015 Transient with SRH lifetimes of e-6.png (file)
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51 KB Process Examples - Simple Diode Transient plot of I-V for diode with SRH generation recombination lifetime of 1e-6 s. 1
16:39, 5 May 2015 Transient with SRH lifetime e-11.png (file)
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50 KB Process Examples - Simple Diode Transient plot of I-V for diode with SRH generation recombination lifetime of 1e-11 s. 1
15:55, 5 May 2015 Gaussian Implant Profile.png (file)
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25 KB Process Examples - Simple Diode Implant Profile of silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um.  1
15:31, 5 May 2015 Transient 0.5e-10 without SRH.png (file)
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28 KB Process Examples - Simple Diode First part, transient analysis of IV curve at time 0.5e-10 seconds. 1