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Combined display of all available logs of Flooxs. You can narrow down the view by selecting a log type, the username (case-sensitive), or the affected page (also case-sensitive).
- 23:31, 15 July 2016 Maddie talk contribs uploaded File:Poisson.pdf (Header file for hemt_ph script; PRiME 2016 Submission for AlGaN/GaN HEMT Chemical Sensor. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law.)
- 23:27, 15 July 2016 Maddie talk contribs uploaded File:Poission.pdf (Header file fro hemt_ph script; PRiME 2016 submission AlGaN/GaN HEMT Chemical Sensors. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law.)
- 23:24, 15 July 2016 Maddie talk contribs uploaded File:Continuity.pdf (Header file for hemt_ph script; PRiME 2016 Submission AlGaN/GaN chemical sensors. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law.)
- 23:20, 15 July 2016 Maddie talk contribs uploaded File:GaN modelfile mo.pdf (GaN model file for the heat_ph deck for the PRiME 2016 submission. Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law.)
- 23:17, 15 July 2016 Maddie talk contribs uploaded File:Hemt ph.pdf (Tutorial script for the AlGaN/GaN HEMT chemical sensor. PRiME conference 2016 - Madeline Sciullo, Erin Patrick, Mo Choudhury, Mark Law.)
- 19:48, 13 July 2016 Maddie talk contribs uploaded File:PRiMESubmissionFigure5.png (Figure 5. Simulated sensitivity (mA/mm-pH) as a function of pH for varying gate lengths (0.5 m to 3.0 m) at a constant drain bias, VDS, of 5.0 V.)
- 19:47, 13 July 2016 Maddie talk contribs uploaded File:PRiMESubmissionFigure4.png (Figure 4. Simulated sensitivity (mA/mm-pH) as a function of pH for varying gate lengths (1.0 m to 10.0 m) at a constant drain bias, VDS, of 2.0 V.)
- 19:35, 13 July 2016 Maddie talk contribs uploaded File:PRiMESubmissionFigure3.png (Figure 3. Simulated results of peak sensitivity (mA/mm-pH) as a function of drain voltage, VDS, for a 1um gate length AlGaN/GaN HEMT pH sensor.)
- 19:32, 13 July 2016 Maddie talk contribs uploaded File:PRiMESubmissionFigure2.png (Figure 2. a) Drain current versus pH with varied drain bias ranging from 1 V to 5 V with a 1 V increment for a 1um gate length device. b) Corresponding sensitivity versus pH. c) Corresponding percent of available surface charge at the gate contact vs. )
- 17:17, 5 May 2015 Maddie talk contribs uploaded File:900 C for 60min Part 2.png (Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 900 degrees Celsius for 60 minutes)
- 17:16, 5 May 2015 Maddie talk contribs uploaded File:1000C for 30 min Part 2.png (Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 1000 degrees Celsius for 30 minutes)
- 17:15, 5 May 2015 Maddie talk contribs uploaded File:1100 C for 10 mins Part 2.png (Model Development Solutions Part 2 Implant profile for Carbon diffusion in Silicon at 1100 degrees Celsius for 10 minutes)
- 17:14, 5 May 2015 Maddie talk contribs uploaded File:1100C for 10 mins Part 1.png (Model Development Solutions Part 1 Implant profile for Carbon diffusion in Silicon at 1100 degrees Celsius for 10 minutes )
- 17:13, 5 May 2015 Maddie talk contribs uploaded File:1000 C for 30 mins Part 1.png (Model Development Solutions Implant profile for Carbon diffusion in Silicon at 1000 degrees Celsius for 30 minutes )
- 17:12, 5 May 2015 Maddie talk contribs uploaded File:900 C for 60mins Part 1.png (Model Development Solutions Implant profile for Carbon diffusion in Silicon at 900 degrees Celsius for 60 minutes )
- 16:40, 5 May 2015 Maddie talk contribs uploaded File:Transient with SRH lifetimes of e-6.png (Process Examples - Simple Diode Transient plot of I-V for diode with SRH generation recombination lifetime of 1e-6 s. )
- 16:39, 5 May 2015 Maddie talk contribs uploaded File:Transient with SRH lifetime e-11.png (Process Examples - Simple Diode Transient plot of I-V for diode with SRH generation recombination lifetime of 1e-11 s. )
- 15:55, 5 May 2015 Maddie talk contribs uploaded File:Gaussian Implant Profile.png (Process Examples - Simple Diode Implant Profile of silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um. )
- 15:31, 5 May 2015 Maddie talk contribs uploaded File:Transient 0.5e-10 without SRH.png (Process Examples - Simple Diode First part, transient analysis of IV curve at time 0.5e-10 seconds. )