User talk:Maddie

Diode - simple IV

FIRST: Build a one dimensional silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um.  Think carefully about the grid spacing needed to resolve the problem! Use constant mobility of 1000 for electrons and 200 for holes.  Ignore recombination (for now).  

SECOND: Implement a simple version of the three device equations and plot current v. voltage.  Cut the grid spacing in half, and rerun the current / voltage plot.  Does the current change appreciably?  What does that say about the choice of grid? Add a simple SRH recombination with carrier lifetimes of 1 nanosecond.  Use 1.0e10 for the intrinsic carrier concentration.  How does the reverse bias current change?