User talk:Maddie

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Diode - simple IV Build a one dimensional silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um. Think carefully about the grid spacing needed to resolve the problem! Use constant mobility of 1000 for electrons and 200 for holes. Ignore recombination (for now).

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