Process Solves: Difference between revisions
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These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected. | These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected. | ||
*[[defect]] - specify parameters that control the properties of the defects | *[[Defect Command | defect]] - specify parameters that control the properties of the defects | ||
*[[ | *[[DepositCommand | deposit]] - deposit a new material | ||
*[[diffuse]] - simulate all types of thermal steps, including anneals, oxidations, and silicidations | *[[Diffuse Command | diffuse]] - simulate all types of thermal steps, including anneals, oxidations, and silicidations | ||
*[[dopant]] - specify parameters that control the properties of the dopants | *[[rta Command | rta]] - simulate a rapid thermal anneal by specifying dwell temperature/time, and ramp/cool down rates | ||
*[[etch]] - use with a specific etch machine to evolve the surface according to the type of etching specified | *[[Dopant Command | dopant]] - specify parameters that control the properties of the dopants | ||
*[[loop]] - allows the specification of dislocation loop parameters and models | *[[Etch Command | etch]] - use with a specific etch machine to evolve the surface according to the type of etching specified | ||
*[[machine]] - used to specify the etch and deposit rates and types for different materials during a single named etch. The defined machine can then be used during a specific deposition and etch statement. | *[[Loop Command | loop]] - allows the specification of dislocation loop parameters and models | ||
*[[oxide]] - specify the oxidation parameters for wet and dry oxidations | *[[Machine Command | machine]] - used to specify the etch and deposit rates and types for different materials during a single named etch. The defined machine can then be used during a specific deposition and etch statement. | ||
*[[silicide]] - specify parameters that control the properties of silicidation | *[[Oxide Command | oxide]] - specify the oxidation parameters for wet and dry oxidations | ||
*[[strip]] - this command removes a specified surface material in its entirety | *[[Silicide Command | silicide]] - specify parameters that control the properties of silicidation | ||
*[[trap]] - specify the parameters for point defect bulk traps | *[[Strip Command | strip]] - this command removes a specified surface material in its entirety | ||
*[[gate etch]] - | *[[Trap Command | trap]] - specify the parameters for point defect bulk traps | ||
*[[Gate Etch Command | gate etch]] - | |||
Latest revision as of 20:28, 24 October 2014
FLOOPS Specific Commands
These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected.
- defect - specify parameters that control the properties of the defects
- deposit - deposit a new material
- diffuse - simulate all types of thermal steps, including anneals, oxidations, and silicidations
- rta - simulate a rapid thermal anneal by specifying dwell temperature/time, and ramp/cool down rates
- dopant - specify parameters that control the properties of the dopants
- etch - use with a specific etch machine to evolve the surface according to the type of etching specified
- loop - allows the specification of dislocation loop parameters and models
- machine - used to specify the etch and deposit rates and types for different materials during a single named etch. The defined machine can then be used during a specific deposition and etch statement.
- oxide - specify the oxidation parameters for wet and dry oxidations
- silicide - specify parameters that control the properties of silicidation
- strip - this command removes a specified surface material in its entirety
- trap - specify the parameters for point defect bulk traps
- gate etch -