Manual: Difference between revisions
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* [[Setting Parameters]] - how parameters work | * [[Setting Parameters]] - how parameters work | ||
* [[Alagator]] - Alagator is the scripting language created specifically for FLOOXS to describe the differential equations used in process and device simulation. It sits on top of tcl. | * [[Alagator]] - Alagator is the scripting language created specifically for FLOOXS to describe the differential equations used in process and device simulation. It sits on top of tcl. | ||
=Examples= | =Examples= |
Revision as of 17:28, 13 March 2019
Introduction: What is FLOODS/FLOOPS?
FLOOXS is a Technology Computer Aided Design (TCAD) tool used for semiconductor process modeling and semiconductor device modeling that will descretize and solve a set of partial and ordinary differential equations on a 1, 2 or 3D mesh using numerical methods such as the Finite Element Method (FEM) and the Finite Volume Method (FVM). FLOOXS is built in c++, and uses several well-known math packages such as BLAS, LAPACK, and PETSC to handle the linear algebra. The user-interface is command-line tcl (tool control language), a scripting language, with additional FLOOXS-specific Alagator commands added in.
Running FLOOXS
- Startup Script - set environment variables and alias paths (running FLOOXS for the first time)
Overview and Basic Concepts
- Tcl - Tool Control Language is the main scripting language used to control local variables (set), do simple calculations (expr), define procedures (functions or routines), and accomplish basic read/write file operations (file). It sits on top of c++.
- Setting Parameters - how parameters work
- Alagator - Alagator is the scripting language created specifically for FLOOXS to describe the differential equations used in process and device simulation. It sits on top of tcl.
Examples
General Overview of Device Simulation
This section includes a general discussion of the governing differential equations commonly used in semiconductor device simulation (e.g. the Poisson and continuity equations) and how they are depicted in the FLOOXS Alagator script, as well as common methods for declaring boundary and initial conditions.
Installation
- Installation on Mac OSX not Lion yet - notes from v 4.1 ...
- Installation on Ubuntu 10.10 - Notes from a 64-bit Ubuntu 10.10 (Maverick Meerkat) current version FLOOXS installation with both Intel and AMD processors on 11/05/2010.
- Installation on Ubuntu - Notes from a 64-bit Ubuntu 9.10 (Karmic Koala) current version FLOOXS installation with both Intel and AMD processors on 3/29/2010.
- Installation on RedHat - (this version is outdated). Installation help and notes created as I did a clean install on a RedHat linux system. Your mileage may vary.
- Installation on Windows Linux Subsystem - Notes from Ubuntu 18.04 Subsystem on Windows 64-bit.
- Ubuntu 18.04 - See Installation on Windows Linux Subsystem, same instructions from get flooxs on.
Tutorial
- Process Tutorial - floops
- Device Tutorial - floods
If you've never used FLOOXS before, start here. Work through these examples and exercises to learn the basics of FLOOXS. The example decks here contain line-by-line explanations, and are organized in such a way as to introduce important concepts in increasing complexity. Full unannotated examples are in the full examples section.
Workflow: How to create a FLOOXS simulation from scratch
1. Grid Generation
These are worked examples of grid generation concepts. Build 1D, 2D, and 3D structures for simulation.
- Defining a Grid - 1D, 2D, and 3D
- Gas - is an automatically generated material. Where does floods put it?
- What is a .str file? - explanation of the format of the structure file
- Adaptive Gridding - new
3. Add Solution Variables
Includes a general discussion of declaring variables in FLOOXS, including "pde" vs. "const," and "solution" vs. "sel z=" vs. "set."
4. Add Process or Device Models
- Process Models - FLOOPS
- Device Models - FLOODS
5. Solve
- Process Solves - FLOOPS
- Device Solves - FLOODS
6. Post Processing (print or plot results)
Although not as fancy as commercial tools, there are a wide range of ways to examine output results. Examples of analysis can be found in this section.
- Selection Examples
- Printing Examples
- Plotting Examples - new short version
- Tecplot - For UF SWAMP Group / TEC users only
Additional Notes
Troubleshooting
Convergence: Having problems with solution convergence? If so, refer to this convergence FAQ page.
Check All Your Equations - Use this PrintEqns procedure
Full FLOOXS Examples
These are full working decks that can be used as templates. If you would like line-by-line explanation of these examples, see the tutorial section of this manual.
- Device Examples - full floods decks
- Process Examples - Homework Problems
- Complex Examples - Complex Examples for device and process
- AlGaN/GaN HEMT - reliability simulation results
Command Reference Library
This contains a command reference, in Unix man page style for each command in the program.
Development Activities
FLOOXS is under development at UF and used around the world.
Code Description
- What is Under the Hood - Detailed - A detailed description of how the c++ code is organized, how the finite element methods is implemented, what physics currently exist and how to add more.
Contributors
Faculty Mark Law, University of Florida Ph.D Students Daniel Cummings - 2010 - danieljc@ufl.edu (Device Simulation: Strained-Si, Single-Event Effects) David Horton - 2013 - davidchorton@gmail.com (Device Simulation: Mechanisms of degradation of AlGaN/GaN devices, OFF state strain-driven diffusion, ON state hot-electron effects) Nicole Rowsey - 2011 - nrowsey@ufl.edu (Device Simulation: TID Effects, Multi-Gate, Charge Qubit Devices) Ashish Kumar - 2013 - email- ashishk@ufl.edu (Process Simulation: Silicide Growth, Dopant Segregation, Stress and Strain Analysis) Madeline Sciullo - 2015 - email- madelinesciullo@ufl.edu (Process Simulation: Carbon Model Development; Device Simulation: SRH PN Diode (1D), AlGaN/GaN HEMT Chemical Sensors). Shrijit Mukherjee - 2015 - email- shrijitm10@ufl.edu (Device Simulation: Sinusoidal Steady State Analysis, Interface trapping). Henry Aldridge - 2016 - email- aldridhl@ufl.edu (Process Simulation: Dopant Diffusion and Activation in III-V Semiconductors). Post-Docs Michelle Griglione - email Erin Patrick - ee1[at]ufl.edu Past Students and Post-Docs
Intel Development Team Martin Giles, Stephen Cea, Hal Kennel, Aaron Lilak, and Patrick Keys. Intel is feeding back bug fixes and enhancements. Steve Morris - we miss you!
Collaborators Rex Lowther, Harris. Grid and diffusion discretizations, Cylindrical Coordinates; Mike Morris, Steve Morris, Al Tasch, University of Texas, Austin. Dual pearson implant models for boron, bf2, and arsenic; Goodwin Chin, IBM. Original ideas for hierarchical mesh; Tim Davis, University of Florida. UMF factorization code.
Copyright and Redistribution
This software and manual is copyrighted by the Mark Law, University of Florida Electrical and Computer Engineering department. It is intended for internal educational and research and development purposes only. Any use of any part of this software in any commercial package needs to be negotiated separately. Several of the implant models are copyrighted by Al Tasch from The University of Texas at Austin. It uses public domain software tcl/tk and various linear algebra packages.
Authorization for Download of 2008
This version is best if you wish to do Si process simulation - implant, diffusion, shallow junction formation. To obtain the 2008 release, you must complete the license form scan/email it to Dr. Mark E. Law at law at ece dot ufl dot edu.
Authorization for Download of 2011
This version is best if you wish to simulate device / sensor performance. To obtain the 2011 release, you must complete the license form andscan/email it to Dr. Mark E. Law at law at ece dot ufl dot edu.