Command Reference Library: Difference between revisions
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*[[DepositCommand | deposit]] The deposit command allows new material to be deposited on the wafer surface. This command is all new for the 2002 release. | *[[DepositCommand | deposit]] The deposit command allows new material to be deposited on the wafer surface. This command is all new for the 2002 release. | ||
*[[Diffuse Command | diffuse]] Simulate all types of thermal steps, including anneals, oxidations, and silicidations. | *[[Diffuse Command | diffuse]] Simulate all types of thermal steps, including anneals, oxidations, and silicidations. | ||
*[[Rta_Command | rta]] This is a simplified interface to the diffuse command and temperature ramps for rta anneals. | |||
*[[Etch Command | etch]] This command is used with a specific etch to evolve the surface according to the type of etching specified. | *[[Etch Command | etch]] This command is used with a specific etch to evolve the surface according to the type of etching specified. | ||
*[[Furnace Command | furnace]] This is a simplified interface to the diffuse command for furnace anneals. | *[[Furnace Command | furnace]] This is a simplified interface to the diffuse command for furnace anneals. | ||
*[[Implant Command | implant]] Implant a dopant and add it to the existing distributions. | *[[Implant Command | implant]] Implant a dopant and add it to the existing distributions. | ||
*[[Mask Command | mask]] This command is used to create a mask. It can be used subsequently with an implant or etch command.. | *[[Mask Command | mask]] This command is used to create a mask. It can be used subsequently with an implant or etch command.. | ||
*[[Strip Command | strip]] This command removes a specified surface material in its entirety. | *[[Strip Command | strip]] This command removes a specified surface material in its entirety. | ||
Revision as of 20:31, 24 October 2014
Command Conventions
Some basic ideas on how commands work and are used.
Grid Commands
Commands to control grid generation and refinement.
- fs creating and control of new fieldservers - expert use only!
- line - Controls placement of gridlines for rectilinear meshes
- region - Allows rectangular materials to be created
- init - Initializes the grid structure from rectangular commands or a saved file
- struct - Allows the grid and solution values to be saved or read from a file
- Smooth - smooths the grid and attempts to make equilaterial elements
- grid - access to many grid information / manipulation actions
Post Processing Commands
Commands to analyze data.
Most common post processing commands:
Application Specific Commands
Commands to solve systems of equations, deposit materials, and more!
Process Commands
- deposit The deposit command allows new material to be deposited on the wafer surface. This command is all new for the 2002 release.
- diffuse Simulate all types of thermal steps, including anneals, oxidations, and silicidations.
- rta This is a simplified interface to the diffuse command and temperature ramps for rta anneals.
- etch This command is used with a specific etch to evolve the surface according to the type of etching specified.
- furnace This is a simplified interface to the diffuse command for furnace anneals.
- implant Implant a dopant and add it to the existing distributions.
- mask This command is used to create a mask. It can be used subsequently with an implant or etch command..
- strip This command removes a specified surface material in its entirety.
Device Commands
- contact This command allows contacts to be added to an existing structure. It can also be used to fetch contact information - like current.
- device This is the main simulation command and supports DC, AC, and noise analysis.
Other Commands
Miscellaneous commands that aren't really categorizable. There are many useful commands here!