AlGaN/GaN HEMT - chemical sensors: Difference between revisions

From Flooxs
Jump to navigation Jump to search
No edit summary
No edit summary
Line 1: Line 1:
Optimization of GaN-based HEMTs for Chemical Sensing: A Simulation Study
== Optimization of GaN-based HEMTs for Chemical Sensing: A Simulation Study ==


Analysis of trends with parameters such as gate length and drain-to-source voltage with respect to sensitivity.
This page provides a brief analysis of trends with parameters such as gate length and drain-to-source voltage with respect to sensitivity for AlGaN/GaN HEMTs pH sensors.

Revision as of 18:17, 13 July 2016

Optimization of GaN-based HEMTs for Chemical Sensing: A Simulation Study

This page provides a brief analysis of trends with parameters such as gate length and drain-to-source voltage with respect to sensitivity for AlGaN/GaN HEMTs pH sensors.