Process Solves: Difference between revisions
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These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected. | These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected. | ||
*[[defect]] - specify parameters that control the properties of the defects | *[[Defect Command | defect]] - specify parameters that control the properties of the defects | ||
*[[ | *[[Deposit Command | deposit]] - deposit a new material | ||
*[[diffuse]] - simulate all types of thermal steps, including anneals, oxidations, and silicidations | *[[Diffuse Command | diffuse]] - simulate all types of thermal steps, including anneals, oxidations, and silicidations | ||
*[[dopant]] - specify parameters that control the properties of the dopants | *[[Dopant Command | dopant]] - specify parameters that control the properties of the dopants | ||
*[[etch]] - use with a specific etch machine to evolve the surface according to the type of etching specified | *[[Etch Command | etch]] - use with a specific etch machine to evolve the surface according to the type of etching specified | ||
*[[loop]] - allows the specification of dislocation loop parameters and models | *[[Loop Command | loop]] - allows the specification of dislocation loop parameters and models | ||
*[[machine]] - used to specify the etch and deposit rates and types for different materials during a single named etch. The defined machine can then be used during a specific deposition and etch statement. | *[[Machine Command | machine]] - used to specify the etch and deposit rates and types for different materials during a single named etch. The defined machine can then be used during a specific deposition and etch statement. | ||
*[[oxide]] - specify the oxidation parameters for wet and dry oxidations | *[[Oxide Command | oxide]] - specify the oxidation parameters for wet and dry oxidations | ||
*[[silicide]] - specify parameters that control the properties of silicidation | *[[Silicide Command | silicide]] - specify parameters that control the properties of silicidation | ||
*[[strip]] - this command removes a specified surface material in its entirety | *[[Strip Command | strip]] - this command removes a specified surface material in its entirety | ||
*[[trap]] - specify the parameters for point defect bulk traps | *[[Trap Command | trap]] - specify the parameters for point defect bulk traps | ||
*[[gate etch]] - | *[[Gate Etch Command | gate etch]] - | ||
Revision as of 21:53, 23 August 2010
FLOOPS Specific Commands
These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected.
- defect - specify parameters that control the properties of the defects
- deposit - deposit a new material
- diffuse - simulate all types of thermal steps, including anneals, oxidations, and silicidations
- dopant - specify parameters that control the properties of the dopants
- etch - use with a specific etch machine to evolve the surface according to the type of etching specified
- loop - allows the specification of dislocation loop parameters and models
- machine - used to specify the etch and deposit rates and types for different materials during a single named etch. The defined machine can then be used during a specific deposition and etch statement.
- oxide - specify the oxidation parameters for wet and dry oxidations
- silicide - specify parameters that control the properties of silicidation
- strip - this command removes a specified surface material in its entirety
- trap - specify the parameters for point defect bulk traps
- gate etch -