Developers and Contributors: Difference between revisions
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(Created page with "==Contributors== Faculty Mark Law, University of Florida Erin Patrick, University of Florida Al Tasch, University of Texas Ph.D Students *Daniel Cummings - 2010 - danieljc@ufl.e...") |
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*Nicole Rowsey - 2011 - nrowsey@ufl.edu (Device Simulation: TID Effects, Multi-Gate, Charge Qubit Devices) | *Nicole Rowsey - 2011 - nrowsey@ufl.edu (Device Simulation: TID Effects, Multi-Gate, Charge Qubit Devices) | ||
*Ashish Kumar - 2013 - email- ashishk@ufl.edu (Process Simulation: Silicide Growth, Dopant Segregation, Stress and Strain Analysis) | *Ashish Kumar - 2013 - email- ashishk@ufl.edu (Process Simulation: Silicide Growth, Dopant Segregation, Stress and Strain Analysis) | ||
*Shrijit Mukherjee - 2015 - email- shrijitm10@ufl.edu (Device Simulation: Sinusoidal Steady State Analysis, Interface trapping). | *Shrijit Mukherjee - 2015 - email- shrijitm10@ufl.edu (Device Simulation: Sinusoidal Steady State Analysis, Interface trapping). | ||
*Henry Aldridge - 2016 - email- aldridhl@ufl.edu (Process Simulation: Dopant Diffusion and Activation in III-V Semiconductors). | *Henry Aldridge - 2016 - email- aldridhl@ufl.edu (Process Simulation: Dopant Diffusion and Activation in III-V Semiconductors). | ||
*Madeline (Sciullo) Esposito - 2018 - email- msciullo2010@my.fit.edu (Process Simulation: Carbon Model Development; Device Simulation: SRH PN Diode (1D), AlGaN/GaN HEMT Chemical Sensors). | |||
Post-Docs | Post-Docs | ||
Revision as of 17:43, 14 March 2019
Contributors
Faculty Mark Law, University of Florida Erin Patrick, University of Florida Al Tasch, University of Texas
Ph.D Students
- Daniel Cummings - 2010 - danieljc@ufl.edu (Device Simulation: Strained-Si, Single-Event Effects)
- David Horton - 2013 - davidchorton@gmail.com (Device Simulation: Mechanisms of degradation of AlGaN/GaN devices, OFF state strain-driven diffusion, ON state hot-electron effects)
- Nicole Rowsey - 2011 - nrowsey@ufl.edu (Device Simulation: TID Effects, Multi-Gate, Charge Qubit Devices)
- Ashish Kumar - 2013 - email- ashishk@ufl.edu (Process Simulation: Silicide Growth, Dopant Segregation, Stress and Strain Analysis)
- Shrijit Mukherjee - 2015 - email- shrijitm10@ufl.edu (Device Simulation: Sinusoidal Steady State Analysis, Interface trapping).
- Henry Aldridge - 2016 - email- aldridhl@ufl.edu (Process Simulation: Dopant Diffusion and Activation in III-V Semiconductors).
- Madeline (Sciullo) Esposito - 2018 - email- msciullo2010@my.fit.edu (Process Simulation: Carbon Model Development; Device Simulation: SRH PN Diode (1D), AlGaN/GaN HEMT Chemical Sensors).
Post-Docs
- Michelle Griglione
- Chad Lindfors
Intel Development Team Martin Giles, Stephen Cea, Hal Kennel, Aaron Lilak, and Patrick Keys. Intel is feeding back bug fixes and enhancements. Steve Morris - we miss you!
Collaborators
- Rex Lowther, Harris. Grid and diffusion discretizations, Cylindrical Coordinates;
- Mike Morris, Steve Morris, Al Tasch, University of Texas, Austin. Dual pearson implant models for boron, bf2, and arsenic;
- Goodwin Chin, IBM. Original ideas for hierarchical mesh
- Tim Davis, University of Florida. UMF factorization code (now suitesparse)