Device Examples: Difference between revisions

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= Updated FLOOXS Device Examples =
== Resistor ==
* [[Resistor (1D) - Scharfetter Gummel Method]]
* [[Resistor (1D) - Quasi Fermi Method]]
* [[Resistor (2D) - Scharfetter Gummel Method]]
* [[Resistor (2D) - Quasi Fermi Method]]
* [[Resistor (3D) - Scharfetter Gummel Method]]
* [[Resistor (3D) - Quasi Fermi Method]]
== P-N Diode ==
* [[PN diode (1D) - Scharfetter Gummel Method]]
* [[PN diode (1D) - Quasi Fermi Method]]
* [[SRH PN Diode (1D) - Scharfetter Gummel Method]]
* [[SRH PN Diode (1D) - Quasi Fermi Method]]
* [[PN diode (2D) - Scharfetter Gummel Method]]
* [[PN diode (2D) - Quasi Fermi Method]]
* [[PN diode (3D) - Scharfetter Gummel Method]]
* [[PN diode (3D) - Quasi Fermi Method]]
== Bulk-Si MOSFET ==
* [[NMOS IV (2D) - Scharfetter Gummel Method]]
== FinFET ==
== BJT ==
== AlGaN/GaN HEMT ==
== Single-Event Effects ==
= Old FLOOXS Device Examples =
== Startup Script ==
== Startup Script ==
* [[Startup Script - full]] - source from the bash command line
* [[Startup Script - full]] - source from the bash command line

Latest revision as of 16:45, 18 May 2019

Updated FLOOXS Device Examples

Resistor

P-N Diode

Bulk-Si MOSFET

FinFET

BJT

AlGaN/GaN HEMT

Single-Event Effects

Old FLOOXS Device Examples

Startup Script

Resistor

P-N Diode

Bulk-Si MOSFET

FinFET

BJT

AlGaN/GaN HEMT

Single-Event Effects

Other Useful Resources

The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.

The International Technology Roadmap for Semiconductors (ITRS)