File:Gaussian Implant Profile.png: Revision history

Jump to navigation Jump to search

Diff selection: Mark the radio buttons of the revisions to compare and hit enter or the button at the bottom.
Legend: (cur) = difference with latest revision, (prev) = difference with preceding revision, m = minor edit.

5 May 2015

  • curprev 15:5515:55, 5 May 2015‎ Maddie talk contribs‎ 191 bytes +191‎ Process Examples - Simple Diode Implant Profile of silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um. 
Retrieved from "http://www.flooxs.ece.ufl.edu/index.php/File:Gaussian_Implant_Profile.png"