GaN Models Source file (2D) - full deck: Difference between revisions
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The "DevicePacakge" command initializes a device simulation | |||
DevicePackage | |||
Constants used throughout device equations | |||
set k 1.38066e-23 | |||
set q 1.60218e-19 | |||
set kev 8.617e-5 | |||
set Vt ($k*Temp/$q) | |||
set eps0 8.854e-14 | |||
set kev 8.617e-5 | |||
set VtRoom [expr $k*300.0/$q] | |||
set hbar 1.054571628e−34 | |||
set egan 7.88e-13 | |||
set Me 9.1e-31 | |||
set tau 1e-8 | |||
Parameter database values for materials used in GaN device structure begins here. | |||
#paramaters for gas | |||
pdbSetString gas YoungsModulus 1e-7 | |||
pdbSetString gas PoissonRatio 0.99 | |||
GaN and AlGaN stiffness values with lattice temperature feedback | |||
#Set Youngs Modulus and Poissons Ratio(for WZ crystal 0001 plane) | |||
pdbSetString GaN YoungsModulus (3.9e12-0.16e10*(Temp-300.0)) | |||
pdbSetString GaN PoissonRatio 0.352 | |||
#Set Youngs Modulus and Poissons Ratio(approximation from Nanoindentation in AlGaN paper, Caceres '99) | |||
pdbSetString AlGaN YoungsModulus (3.9e12+(5.555e11*AlN_Ratio)-0.16e10*(Temp-300.0)) | |||
pdbSetString AlGaN PoissonRatio 0.352 | |||
Silicon Nitride stiffness values | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString Nitride YoungsModulus 2.0e12 | |||
pdbSetString Nitride PoissonRatio 0.24 | |||
Oxide phase stiffness values | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString OxPhase YoungsModulus 3.9e12 | |||
pdbSetString OxPhase PoissonRatio 0.352 | |||
Material interface continuity stiffness values | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString AlGaN_GaN YoungsModulus 2.0e12 | |||
pdbSetString AlGaN_GaN PoissonRatio 0.24 | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString AlGaN_OxPhase YoungsModulus 3.9e12 | |||
pdbSetString AlGaN_OxPhase PoissonRatio 0.352 | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString Metal_Nitride YoungsModulus 3.9e12 | |||
pdbSetString Metal_Nitride PoissonRatio 0.352 | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString Metal_OxPhase YoungsModulus 3.9e12 | |||
pdbSetString Metal_OxPhase PoissonRatio 0.352 | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString Nitride_OxPhase YoungsModulus 3.9e12 | |||
pdbSetString Nitride_OxPhase PoissonRatio 0.352 | |||
Gate Metal stiffness values | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString Metal YoungsModulus 3.9e12 | |||
pdbSetString Metal PoissonRatio 0.352 | |||
More material interface continuity stiffness values | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString Gas_Metal YoungsModulus 3.9e12 | |||
pdbSetString Gas_Metal PoissonRatio 0.352 | |||
#Set Youngs Modulus and Poissons Ratio | |||
pdbSetString Gas_Nitride YoungsModulus 3.9e12 | |||
pdbSetString Gas_Nitride PoissonRatio 0.352 |
Revision as of 18:39, 29 January 2014
The "DevicePacakge" command initializes a device simulation
DevicePackage
Constants used throughout device equations
set k 1.38066e-23 set q 1.60218e-19 set kev 8.617e-5 set Vt ($k*Temp/$q) set eps0 8.854e-14 set kev 8.617e-5 set VtRoom [expr $k*300.0/$q] set hbar 1.054571628e−34 set egan 7.88e-13 set Me 9.1e-31 set tau 1e-8
Parameter database values for materials used in GaN device structure begins here.
#paramaters for gas pdbSetString gas YoungsModulus 1e-7 pdbSetString gas PoissonRatio 0.99
GaN and AlGaN stiffness values with lattice temperature feedback
#Set Youngs Modulus and Poissons Ratio(for WZ crystal 0001 plane) pdbSetString GaN YoungsModulus (3.9e12-0.16e10*(Temp-300.0)) pdbSetString GaN PoissonRatio 0.352
#Set Youngs Modulus and Poissons Ratio(approximation from Nanoindentation in AlGaN paper, Caceres '99) pdbSetString AlGaN YoungsModulus (3.9e12+(5.555e11*AlN_Ratio)-0.16e10*(Temp-300.0)) pdbSetString AlGaN PoissonRatio 0.352
Silicon Nitride stiffness values
#Set Youngs Modulus and Poissons Ratio pdbSetString Nitride YoungsModulus 2.0e12 pdbSetString Nitride PoissonRatio 0.24
Oxide phase stiffness values
#Set Youngs Modulus and Poissons Ratio pdbSetString OxPhase YoungsModulus 3.9e12 pdbSetString OxPhase PoissonRatio 0.352
Material interface continuity stiffness values
#Set Youngs Modulus and Poissons Ratio pdbSetString AlGaN_GaN YoungsModulus 2.0e12 pdbSetString AlGaN_GaN PoissonRatio 0.24
#Set Youngs Modulus and Poissons Ratio pdbSetString AlGaN_OxPhase YoungsModulus 3.9e12 pdbSetString AlGaN_OxPhase PoissonRatio 0.352
#Set Youngs Modulus and Poissons Ratio pdbSetString Metal_Nitride YoungsModulus 3.9e12 pdbSetString Metal_Nitride PoissonRatio 0.352
#Set Youngs Modulus and Poissons Ratio pdbSetString Metal_OxPhase YoungsModulus 3.9e12 pdbSetString Metal_OxPhase PoissonRatio 0.352
#Set Youngs Modulus and Poissons Ratio pdbSetString Nitride_OxPhase YoungsModulus 3.9e12 pdbSetString Nitride_OxPhase PoissonRatio 0.352
Gate Metal stiffness values
#Set Youngs Modulus and Poissons Ratio pdbSetString Metal YoungsModulus 3.9e12 pdbSetString Metal PoissonRatio 0.352
More material interface continuity stiffness values
#Set Youngs Modulus and Poissons Ratio pdbSetString Gas_Metal YoungsModulus 3.9e12 pdbSetString Gas_Metal PoissonRatio 0.352
#Set Youngs Modulus and Poissons Ratio pdbSetString Gas_Nitride YoungsModulus 3.9e12 pdbSetString Gas_Nitride PoissonRatio 0.352