Ga2O3 Pubs: Difference between revisions
Jump to navigation
Jump to search
(Created page with "1. S. Ahn, F. Ren, E. Patrick, M.E. Law, S.J. Pearton, and A. Kuramata, “Deuterium Incorporation and Diffusivity in Plasma-Exposed Bulk Ga2O3”, Applied Physics Letters, 109, ...") |
No edit summary |
||
| Line 1: | Line 1: | ||
1. S. Ahn, F. Ren, E. Patrick, M.E. Law, S.J. Pearton, and A. Kuramata, | 1. S. Ahn, F. Ren, E. Patrick, M.E. Law, S.J. Pearton, and A. Kuramata, “[http://aip.scitation.org/doi/full/10.1063/1.4972265 Deuterium Incorporation and Diffusivity in Plasma-Exposed Bulk Ga2O3]”, Applied Physics Letters, 109, DOI: 10.1063/1.4972265, 3 pages, Dec. 2016. | ||
2. S. Ahn, F. Ren, E. Patrick, M.E. Law, S.J. Pearton, “Thermal Stability of Implanted or Exposed Deuterium in Single Crystal Ga2O3”, ECS Journal of Solid State Science and Technology, 6(2), DOI: 10.1149/2.0051702jss, 4 pages, Sept. 2016. | 2. S. Ahn, F. Ren, E. Patrick, M.E. Law, S.J. Pearton, “Thermal Stability of Implanted or Exposed Deuterium in Single Crystal Ga2O3”, ECS Journal of Solid State Science and Technology, 6(2), DOI: 10.1149/2.0051702jss, 4 pages, Sept. 2016. | ||
Revision as of 13:38, 7 February 2017
1. S. Ahn, F. Ren, E. Patrick, M.E. Law, S.J. Pearton, and A. Kuramata, “Deuterium Incorporation and Diffusivity in Plasma-Exposed Bulk Ga2O3”, Applied Physics Letters, 109, DOI: 10.1063/1.4972265, 3 pages, Dec. 2016.
2. S. Ahn, F. Ren, E. Patrick, M.E. Law, S.J. Pearton, “Thermal Stability of Implanted or Exposed Deuterium in Single Crystal Ga2O3”, ECS Journal of Solid State Science and Technology, 6(2), DOI: 10.1149/2.0051702jss, 4 pages, Sept. 2016.