Diffuse Command: Difference between revisions
| Line 40: | Line 40: | ||
An oxidation step for a thick isolation oxide: | An oxidation step for a thick isolation oxide: | ||
diffuse time=90 temp=1000 wet | diffuse time=90 temp=1000 wet | ||
An anneal step, reploting the log of the boron concentration every time step; the plot is not erased and the color is red. See the sel and plot.1d command: | An anneal step, reploting the log of the boron concentration every time step (movie command); the plot is not erased and the color is red. See the sel and plot.1d command: | ||
diffuse time=30 temp=1000 movie = { | diffuse time=30 temp=1000 movie = { | ||
sel z=log10(Boron) | sel z=log10(Boron) | ||
| Line 47: | Line 47: | ||
A low-temperature, high-pressure, oxidation: | A low-temperature, high-pressure, oxidation: | ||
diffuse time=60 temp=950 pressure=5.0 wet | diffuse time=60 temp=950 pressure=5.0 wet | ||
Revision as of 19:41, 24 October 2014
This is from the old blue manual in our lab. It may be outdated, but better than nothing.
diffuse - perform a thermal annealing step
Synopsis
diffuse
- temperature = <n>
- time = <n>
- [pressure = <n>][init = <n>]
- [(cg|umf|dmf)]
- [(chat|quiet|barf)]
- [(linear|logorithm|S2|S4)]
- [dt = <n>][movie=<c>]
- [(dryO2|wetO2|N2)]
Description
This command represents the main simulation capability of FLOOPS. The command simulates thermal annealing and any material growth process during annealing. Both oxidation and silicidation can be handled. Point defect based models for the dopant diffusion can be invoked. This command can be quite time consuming especially for 2D simulations.
temperature = <n>
The annealing temperature in degrees Celsius.
time = <n>
The anneal time in minutes.
init
The first time step in seconds. The default is 0.1s, which is sometimes inappropriate for defect simulations, particularly in cases of damage.
cg,umf,dmf
These options specify the type of matrix package to use in solving the sparse linear systems. The cg option specifies a preconditioned bi-conjugate gradient squared iteration technique. The umf option specifies use of the unsymmetric multi-frontal method developed by Tim Davis at Florida. The dmf option specifies the use of the distributed multi-frontal method developed by Bob Lucas at Stanford. The defaults are to use dmf for 1D problemsa nd the cg iterative method for 2D problems. These are pretty much optimal for most cases; the user shouldn't need to make changes.
chat,quiet,barf
These specify the verbosity of the printed data by the command in increasing annoyingness.
linear,logarithm,S2,S4
These four parameters specify the discretization of the dopant diffusion equations [16,17]. The S4 parameter is the default. These are used primarily in development and do not need to be changed by the casual user.
dt,movie
These parameters allow a user tos pecify actions that occur during the anneal step. Every dt unit of time, the character string value of the movie parameter is executed. If dt is not specified (the usual case) the movie string is executed every time step.
pressure
The pressure of the ambient gas.
dryO2,wetO2,N2
The type of ambient gas. Dry and wet specify the two main types of oxidizing gas. N2 is an inert gas, and does not result in growth. N2 is the default ambient.
Examples
A simple, low-temperature anneal for 30 minutes:
diffuse time=30 temp=900
An oxidation step for a thick isolation oxide:
diffuse time=90 temp=1000 wet
An anneal step, reploting the log of the boron concentration every time step (movie command); the plot is not erased and the color is red. See the sel and plot.1d command:
diffuse time=30 temp=1000 movie = {
sel z=log10(Boron)
plot.1d !cle col=red
}
A low-temperature, high-pressure, oxidation:
diffuse time=60 temp=950 pressure=5.0 wet