Device Tutorial

It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example.

1D - Introducing the grid and the basic device equations and boundary conditions

• Resistor example (1D) - create a grid, learn basic device equations (including bulk equations, the ohmic contact boundary condition, and initial guess procedure)
• PN diode example (1D) - learn how to make doping profile (Doping=f(x,y,z))
• PMOS capacitor example (1D) - learn the metal contact boundary condition

2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas

• Resistor example (2D)
• PN diode example (2D)
• BJT example (2D) - important advanced models for BJT's (SRH, BGN, etc)
• PMOS capacitor example (2D) - learn about the 2DEG
• NMOS example (2D) - learn about where the Gas is
• Double-gate FinFET example (2D)

3D - TecPlot, your computer's limitations, and the Quasi-Fermi Method

• Resistor example (3D) - plotting the grid in TecPlot
• PN diode example (3D)
• PMOS capacitor example (3D)
• NMOS example (3D)

Single-Event Effects

• Single-Event Effects Examples

Other Useful Resources

The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.

• "Well-Tempered" MOSFET

The International Technology Roadmap for Semiconductors (ITRS)

• ITRS Reports