Device Examples: Difference between revisions
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* [[Resistor (1D) - full deck]] | * [[Resistor (1D) - full deck]] | ||
* [[Resistor (2D) - full deck]] | * [[Resistor (2D) - full deck]] | ||
* [[Resistor (3D) - full deck]] - Quasi-Fermi Method | |||
== P-N Diode == | == P-N Diode == | ||
* [[PN diode (1D) - full deck]] | * [[PN diode (1D) - full deck]] | ||
* [[PN diode | * [[PN diode (2D) - full deck]] | ||
* [[PN diode | * [[PN diode (3D) - full deck]] | ||
== Bulk-Si MOSFET == | == Bulk-Si MOSFET == | ||
* [[pMOS capacitor example (1D)]] | * [[pMOS capacitor example (1D)]] | ||
* [[nMOSFET | * [[nMOSFET (2D) - full deck]] | ||
* [[nMOSFET | * [[nMOSFET (3D) - full deck]] | ||
== FinFET == | == FinFET == | ||
* [[Double-gate FinFET | * [[Double-gate FinFET (2D) - full deck]] | ||
== BJT == | == BJT == | ||
* [[BJT | * [[BJT (2D) - full deck]] | ||
== Single-Event Effects == | == Single-Event Effects == | ||
Revision as of 18:14, 9 November 2010
Resistor
- Resistor (1D) - full deck
- Resistor (2D) - full deck
- Resistor (3D) - full deck - Quasi-Fermi Method
P-N Diode
Bulk-Si MOSFET
FinFET
BJT
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)