Device Examples: Difference between revisions
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== Resistor == | == Resistor == | ||
* [[Resistor (1D) - full deck]] | * [[Resistor (1D) - full deck]] | ||
* [[Resistor (2D) - full deck | * [[Resistor (2D) - full deck]] | ||
== P-N Diode == | == P-N Diode == | ||
Revision as of 18:12, 9 November 2010
Resistor
P-N Diode
The following diodes build on the resistor examples where the differences are variable doping profiles and different contact equations.
Bulk-Si MOSFET
FinFET
BJT
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)