Device Examples: Difference between revisions
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== Bulk-Si MOSFET == | == Bulk-Si MOSFET == | ||
* [[ | * [[pMOS capacitor example (1D)]] | ||
* [[ | * [[nMOSFET example (2D)]] | ||
* [[ | * [[nMOSFET example (3D)]] | ||
== FinFET == | == FinFET == | ||
Revision as of 17:55, 9 November 2010
Resistor
P-N Diode
The following diodes build on the resistor examples where the differences are variable doping profiles and different contact equations.
Bulk-Si MOSFET
FinFET
BJT
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)