Device Examples: Difference between revisions
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== BJT == | == BJT == | ||
* [[BJT example (2D)]] | * [[BJT example (2D)]] | ||
* [[ | |||
== Single-Event Effects == | |||
* [[Single-Event Effects Examples]] | |||
== Other Useful Resources == | == Other Useful Resources == |
Revision as of 01:38, 25 September 2010
Resistor
The following resistors offer a good introduction to creating and simulating a device in FLOOXS.
P-N Diode
The following diodes build on the resistor examples where the differences are variable doping profiles and different contact equations.
Bulk-Si MOSFET
FinFET
BJT
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)