Device Examples: Difference between revisions

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== BJT ==
== BJT ==
* [[BJT example (2D)]]
* [[BJT example (2D)]]
* [[BJT example (3D)]]
 
== Single-Event Effects ==
* [[Single-Event Effects Examples]]


== Other Useful Resources ==  
== Other Useful Resources ==  

Revision as of 01:38, 25 September 2010

Resistor

The following resistors offer a good introduction to creating and simulating a device in FLOOXS.

P-N Diode

The following diodes build on the resistor examples where the differences are variable doping profiles and different contact equations.

Bulk-Si MOSFET

FinFET

BJT

Single-Event Effects

Other Useful Resources

The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.

The International Technology Roadmap for Semiconductors (ITRS)