AlGaN Radiation Examples
AlGaN/GaN HEMT DC, RF and transient simulation
Simulation of steady-state, small-signal and transient performance to understand impact of proton-radiation induced and as-grown defects will be discussed here. Fundamental effects of buffer background doping on steady-state behavior is first discussed as it is a prerequisite to understanding published radiation induced static behavior degradation. The potential impact of proton-irradiation damage on RF performance parameters is then discussed based on small-signal analysis simulations. Section on transient simulation focuses on motivation of various switching experiments used to determine trapping by as-grown defects, and how this has been achieved using FLOODS.
Steady-State Simulation
File:Hemt.txt File:Modelfile.txt File:Poisson.txt File:Continuity.txt
Sinusoidal Steady State Analysis
File:Hemt.txt File:Continuity.txt
Transient Simulation
