Developers and History

FLOOXS is under development at UF and used around the world.

Contributors

Faculty Mark Law, University of Florida Ph.D Students Daniel Cummings - 2010 - danieljc@ufl.edu (Device Simulation: Strained-Si, Single-Event Effects) David Horton - 2013 - davidchorton@gmail.com (Device Simulation: Mechanisms of degradation of AlGaN/GaN devices, OFF state strain-driven diffusion, ON state hot-electron effects) Nicole Rowsey - 2011 - nrowsey@ufl.edu (Device Simulation: TID Effects, Multi-Gate, Charge Qubit Devices) Ashish Kumar - 2013 - email- ashishk@ufl.edu (Process Simulation: Silicide Growth, Dopant Segregation, Stress and Strain Analysis) Madeline Sciullo - 2015 - email- madelinesciullo@ufl.edu (Process Simulation: Carbon Model Development; Device Simulation: SRH PN Diode (1D), AlGaN/GaN HEMT Chemical Sensors). Shrijit Mukherjee - 2015 - email- shrijitm10@ufl.edu (Device Simulation: Sinusoidal Steady State Analysis, Interface trapping). Henry Aldridge - 2016 - email- aldridhl@ufl.edu (Process Simulation: Dopant Diffusion and Activation in III-V Semiconductors). Post-Docs Michelle Griglione - email Erin Patrick - ee1[at]ufl.edu Past Students and Post-Docs

Intel Development Team Martin Giles, Stephen Cea, Hal Kennel, Aaron Lilak, and Patrick Keys. Intel is feeding back bug fixes and enhancements. Steve Morris - we miss you!

Collaborators Rex Lowther, Harris. Grid and diffusion discretizations, Cylindrical Coordinates; Mike Morris, Steve Morris, Al Tasch, University of Texas, Austin. Dual pearson implant models for boron, bf2, and arsenic; Goodwin Chin, IBM. Original ideas for hierarchical mesh; Tim Davis, University of Florida. UMF factorization code.