PMOS capacitor example (1D): Difference between revisions
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(New page: #-------------------- # Create 1D structure #-------------------- #Grid line x loc=-0.05 spac=0.01 tag=OxTop line x loc=0.0 spac=0.1 tag=Top line x loc=0.5 spac=0.01 line x loc=1.0 sp...) |
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#-------------------- | #-------------------- | ||
# Create 1D structure | # Create 1D structure | ||
#-------------------- | #-------------------- | ||
#Grid | #Grid | ||
line x loc=-0.05 spac=0.01 tag=OxTop | line x loc=-0.05 spac=0.01 tag=OxTop | ||
line x loc=0.0 spac=0. | line x loc=0.0 spac=0.01 tag=Top | ||
line x loc=0.5 spac=0.01 | line x loc=0.5 spac=0.01 | ||
line x loc=1.0 spac=0.1 tag=Bottom | line x loc=1.0 spac=0.1 tag=Bottom | ||
| Line 18: | Line 18: | ||
contact name=Gate Oxide xlo=[expr {-0.05-$buf}] xhi=[expr {-0.05+$buf}] add | contact name=Gate Oxide xlo=[expr {-0.05-$buf}] xhi=[expr {-0.05+$buf}] add | ||
contact name=GND Silicon xlo=0.9 xhi=1.1 add | contact name=GND Silicon xlo=0.9 xhi=1.1 add | ||
#----------------------------- | #----------------------------- | ||
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set Vt [expr {$k*$T/$q}] | set Vt [expr {$k*$T/$q}] | ||
set ni 1.1e10 | set ni 1.1e10 | ||
set esi [expr 11.8 * 8.85418e-14] | set esi [expr {11.8 * 8.85418e-14}] | ||
set eps [expr $esi / $q] | set eox [expr {3.9 * 8.85418e-14}] | ||
set eps [expr {$esi / $q}] | |||
set epo [expr {$eox / $q}] | |||
set Emob 350.0 | set Emob 350.0 | ||
set Hmob 150.0 | set Hmob 150.0 | ||
set small 1.0e-10 | set small 1.0e-10 | ||
#----------------------------- | |||
# Declare solution variables | |||
#----------------------------- | |||
DevicePackage | |||
solution add name=DevPsi pde solve negative damp | |||
solution add Silicon name=Elec pde solve !negative | |||
solution add Silicon name=Hole pde solve !negative | |||
solution add Oxide name=Elec const solve val=($small) | |||
solution add Oxide name=Hole const solve val=($small) | |||
#solution add name=Ec const solve val=() | |||
#solution add name=Efn const solve val=() | |||
#solution add name=Efp const solve val=() | |||
#solution add name=Ev const solve val=() | |||
#----------------------------- | #----------------------------- | ||
| Line 49: | Line 59: | ||
#plot doping | #plot doping | ||
sel z=Doping | #sel z=log10(abs(Doping)+1.0) | ||
plot.1d symb=1 | #plot.1d symb=1 | ||
#----------------------------- | #----------------------------- | ||
# Bulk Equations | # Bulk Equations | ||
#----------------------------- | #----------------------------- | ||
#Silicon | |||
set eqnP "$eps * grad(DevPsi) + Doping - Elec + Hole" | set eqnP "$eps * grad(DevPsi) + Doping - Elec + Hole" | ||
set eqnE "ddt(Elec) - ($Emob) * $Vt * sgrad(Elec, DevPsi/$Vt)" | set eqnE "ddt(Elec) - ($Emob) * $Vt * sgrad(Elec, DevPsi/$Vt)" | ||
| Line 67: | Line 78: | ||
pdbSetDouble Silicon Hole Abs.Error 1.0e-5 | pdbSetDouble Silicon Hole Abs.Error 1.0e-5 | ||
#Oxide | |||
set eqnP "$eps * grad(DevPsi)" | |||
pdbSetString Silicon DevPsi Equation $eqnP | |||
pdbSetDouble Silicon DevPsi DampValue $Vt | |||
pdbSetDouble Silicon DevPsi Abs.Error 1.0e-9 | |||
#----------------------------- | #----------------------------- | ||
# Interface Equations | # Interface Equations | ||
| Line 103: | Line 120: | ||
#----------------------------- | #----------------------------- | ||
#Bias contacts | #Bias contacts | ||
contact name= | contact name=Gate voltage supply=0.0 | ||
contact name=GND voltage supply=0.0 | contact name=GND voltage supply=0.0 | ||
#Initial Guess | #Initial Guess | ||
| Line 117: | Line 134: | ||
#----------------------------------- | #----------------------------------- | ||
device | device | ||
puts "Electron Flux [contact name= | puts "Electron Flux [contact name=Gate sol=Elec flux]" | ||
puts "Hole Flux [contact name= | puts "Hole Flux [contact name=Gate sol=Hole flux]" | ||
#Plot the equilibrium concentration profiles | #-------------------------------------------------------------- | ||
foreach var {Doping Elec Hole} { | #Plot the equilibrium concentration profiles and Band Diagram | ||
#-------------------------------------------------------------- | |||
if {1} {;#concentration | |||
foreach var {Doping Elec Hole} { | |||
sel z=log10(abs($var)+1.0) | |||
plot.1d label=$var !cle | |||
} | |||
} else {;#band diagram | |||
sel z=DevPsi | |||
} | } | ||
#- | #note - you can't ramp up a moscap bc the depletion region messes | ||
# | # up the Elec and Hole boundary conditions in that region | ||
Revision as of 22:10, 15 November 2010
#--------------------
# Create 1D structure
#--------------------
#Grid
line x loc=-0.05 spac=0.01 tag=OxTop
line x loc=0.0 spac=0.01 tag=Top
line x loc=0.5 spac=0.01
line x loc=1.0 spac=0.1 tag=Bottom
mater add name=Silicon
mater add name=Oxide
region Oxide xlo=OxTop xhi=Top
region Silicon xlo=Top xhi=Bottom
init
#Contacts
set buf 0.001
contact name=Gate Oxide xlo=[expr {-0.05-$buf}] xhi=[expr {-0.05+$buf}] add
contact name=GND Silicon xlo=0.9 xhi=1.1 add
#-----------------------------
# Define constants
#-----------------------------
set T 300.0
set k 1.38066e-23
set q 1.619e-19
set Vt [expr {$k*$T/$q}]
set ni 1.1e10
set esi [expr {11.8 * 8.85418e-14}]
set eox [expr {3.9 * 8.85418e-14}]
set eps [expr {$esi / $q}]
set epo [expr {$eox / $q}]
set Emob 350.0
set Hmob 150.0
set small 1.0e-10
#-----------------------------
# Declare solution variables
#-----------------------------
DevicePackage
solution add name=DevPsi pde solve negative damp
solution add Silicon name=Elec pde solve !negative
solution add Silicon name=Hole pde solve !negative
solution add Oxide name=Elec const solve val=($small)
solution add Oxide name=Hole const solve val=($small)
#solution add name=Ec const solve val=()
#solution add name=Efn const solve val=()
#solution add name=Efp const solve val=()
#solution add name=Ev const solve val=()
#-----------------------------
# Ionized dopant profile
#-----------------------------
sel z=1.0e17 name=Nd
sel z=1.0e20 name=Na
sel z=(Nd-Na) name=Doping
#plot doping
#sel z=log10(abs(Doping)+1.0)
#plot.1d symb=1
#-----------------------------
# Bulk Equations
#-----------------------------
#Silicon
set eqnP "$eps * grad(DevPsi) + Doping - Elec + Hole"
set eqnE "ddt(Elec) - ($Emob) * $Vt * sgrad(Elec, DevPsi/$Vt)"
set eqnH "ddt(Hole) - ($Hmob) * $Vt * sgrad(Hole, -DevPsi/$Vt)"
pdbSetString Silicon DevPsi Equation $eqnP
pdbSetString Silicon Elec Equation $eqnE
pdbSetString Silicon Hole Equation $eqnH
pdbSetDouble Silicon DevPsi DampValue $Vt
pdbSetDouble Silicon DevPsi Abs.Error 1.0e-9
pdbSetDouble Silicon Elec Abs.Error 1.0e-5
pdbSetDouble Silicon Hole Abs.Error 1.0e-5
#Oxide
set eqnP "$eps * grad(DevPsi)"
pdbSetString Silicon DevPsi Equation $eqnP
pdbSetDouble Silicon DevPsi DampValue $Vt
pdbSetDouble Silicon DevPsi Abs.Error 1.0e-9
#-----------------------------
# Interface Equations
#-----------------------------
solution name=DevPsi continuous
#-----------------------------
# Contact Equations
#-----------------------------
proc OhmicContact {Contact} {
global Vt ni
pdbSetBoolean $Contact Elec Flux 1
pdbSetBoolean $Contact Hole Flux 1
pdbSetBoolean $Contact DevPsi Flux 1
pdbSetBoolean $Contact Elec Fixed 1
pdbSetBoolean $Contact Hole Fixed 1
pdbSetBoolean $Contact DevPsi Fixed 1
pdbSetDouble $Contact Elec Flux.Scale 1.619e-19
pdbSetDouble $Contact Hole Flux.Scale 1.619e-19
pdbSetString $Contact DevPsi Equation "Nd - Na - Elec + Hole"
pdbSetString $Contact Elec Equation "DevPsi - $Vt*log((Elec)/$ni) -$Contact"
pdbSetString $Contact Hole Equation "DevPsi + $Vt*log((Hole)/$ni) -$Contact"
}
OhmicContact GND
proc MetalContact {Contact} {
set WF "0.0"
pdbSetBoolean $Contact DevPsi Flux 1
pdbSetBoolean $Contact DevPsi Fixed 1
pdbSetString $Contact DevPsi Equation "DevPsi - $Contact + $WF"
}
MetalContact Gate
#-----------------------------
# Initial Conditions
#-----------------------------
#Bias contacts
contact name=Gate voltage supply=0.0
contact name=GND voltage supply=0.0
#Initial Guess
sel z= {(Doping>0.0)
? ( 0.025*log( (Doping+$small) / $ni))
: (-0.025*log(-(Doping+$small) / $ni))} name = DevPsi
sel z=$ni*exp(DevPsi/$Vt) name=Elec
sel z=$ni*exp(-DevPsi/$Vt) name=Hole
#-----------------------------------
# 1st DC Solve at Equilibrium (0V)
#-----------------------------------
device
puts "Electron Flux [contact name=Gate sol=Elec flux]"
puts "Hole Flux [contact name=Gate sol=Hole flux]"
#--------------------------------------------------------------
#Plot the equilibrium concentration profiles and Band Diagram
#--------------------------------------------------------------
if {1} {;#concentration
foreach var {Doping Elec Hole} {
sel z=log10(abs($var)+1.0)
plot.1d label=$var !cle
}
} else {;#band diagram
sel z=DevPsi
}
#note - you can't ramp up a moscap bc the depletion region messes
# up the Elec and Hole boundary conditions in that region