Device Examples: Difference between revisions
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(New page: == Resistor == The following resistors offer a good introduction to creating and simulating a device in FLOOXS. * resistor example (1D) * resistor example (2D) == P-N Diode == Th...) |
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== Other Useful Resources == | == Other Useful Resources == | ||
The MIT "Well-Tempered" Bulk-Si MOSFET has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller. | The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller. | ||
* [http://www-mtl.mit.edu/researchgroups/Well/ "Well-Tempered" MOSFET] | * [http://www-mtl.mit.edu/researchgroups/Well/ "Well-Tempered" MOSFET] | ||
The International Technology Roadmap for Semiconductors (ITRS) | The International Technology Roadmap for Semiconductors (ITRS) | ||
* [http://www.itrs.net/reports.html ITRS Reports] | * [http://www.itrs.net/reports.html ITRS Reports] |
Revision as of 21:36, 13 September 2008
Resistor
The following resistors offer a good introduction to creating and simulating a device in FLOOXS.
P-N Diode
The following diode examples build on the resistor examples where the differences are variable doping profiles and contact equations.
Bulk-Si MOSFET
FinFET
BJT
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)