Ohmic Contact: Difference between revisions
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* [[proc OhmicContact]] | * [[proc OhmicContact]] | ||
* [[proc ReprintConstants]] | * [[proc ReprintConstants]] | ||
test | |||
Revision as of 13:49, 11 September 2018
# standard ohmic contact
proc ohmic.contact {Contact} {
set vt 0.02558357
set ni 1.1e10
pdbSetBoolean $Contact Elec Flux 1
pdbSetBoolean $Contact Hole Flux 1
pdbSetBoolean $Contact DevPsi Flux 1
pdbSetBoolean $Contact Elec Fixed 1
pdbSetBoolean $Contact Hole Fixed 1
pdbSetBoolean $Contact DevPsi Fixed 1
pdbSetDouble $Contact Elec Flux.Scale 1.619e-19
pdbSetDouble $Contact Hole Flux.Scale 1.619e-19
pdbSetString $Contact DevPsi Equation "Doping - Elec + Hole";#charge neutrality
pdbSetString $Contact Elec Equation "DevPsi - $vt*log((Elec+1.0e-10)/$ni) - $Contact";#pin Efn
pdbSetString $Contact Hole Equation "DevPsi + $vt*log((Hole+1.0e-10)/$ni) - $Contact";#pin Efp
}
Notes
The commands in this procedure simulate the conditions of the quasi-neutral region (a region in equilibrium) that would result "sufficiently far away" from interfaces, in the "bulk" of a semiconductor, due to an ohmic contact. The equilibrium conditions are: 1. and 2. the n- and p-quasi-fermi-levels are equal and pinned to the applied voltage at the contact; 3. charge neutrality holds.
Another Method - compatible with FD statistics and P-only solves
test