Device Models: Difference between revisions
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* [[Ohmic Contact]] | * [[Ohmic Contact]] | ||
* [[Work-Function Difference]] (metal gate on a MOSFET) | |||
* [[Schottky Contact]] | * [[Schottky Contact]] | ||
* [[Quasi-Fermi Contact]] | * [[Quasi-Fermi Contact]] | ||
Revision as of 21:05, 28 January 2010
Bulk Equations
Choose Your Statistics
Poisson's Equation
- Poisson's Equation
- Adding Ionized Dopants
- Incomplete Ionization (Temperature-dependence of Na and Nd))
Band Terms
- Defining Your Band Terms (Ec,Ev,Efp,Efn)
- Temperature-Dependent Bands
Continuity Equations
- Static Species
- Diffusion
- Drift Diffusion (Sharfetter-Gummel)
- General Equation Builder (choose automatically between above 3 equations)
- Quasi-Fermi Method
Mobility
- Masetti Mobility Model
- Philips Unified Mobility Model
- Enhanced Lombardi Model
- Canali Velocity Saturation
Recombination-Generation
Contacts/Boundary Conditions
- Ohmic Contact
- Work-Function Difference (metal gate on a MOSFET)
- Schottky Contact
- Quasi-Fermi Contact
- Slotboom Contact
- Boundary Sink