Device Examples: Difference between revisions
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== AlGaN/GaN HEMT == | == AlGaN/GaN HEMT == | ||
* [[GaN Models Source file (2D) - full deck]] | * [[GaN Models Source file (2D) - full deck]] | ||
* [[T-Gate Dimensions file (2D) - full deck]] | |||
* [[T-Gate, ON state (2D) - full deck]] | * [[T-Gate, ON state (2D) - full deck]] | ||
Revision as of 17:01, 28 January 2014
Startup Script
- Startup Script - full - source from the bash command line
Resistor
- Resistor (1D) - full deck
- Resistor (2D) - full deck
- Resistor (3D) - full deck - Quasi-Fermi Method
P-N Diode
Bulk-Si MOSFET
FinFET
BJT
AlGaN/GaN HEMT
- GaN Models Source file (2D) - full deck
- T-Gate Dimensions file (2D) - full deck
- T-Gate, ON state (2D) - full deck
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)