Printing Examples

Junction Depth and Layers

Integrate Dose and Find Junction

Grid1D

sel z = {1.0e18*exp(-x * x / 0.01) - 1.0e15}

layers

The above deck initializes the grid with a default one dimensional structure. The second command selects as the plot variable a Gaussian profile minus a background doping. The layers command integrates the selected variable and reports zero crossings. The output is:

	Top          Bottom        Integral    Material
0.00000e 00     2.62905e-01     8.83423e 12    Silicon
0.262905e-1     5.00000e 01    -4.97191e 12    Silicon

The top layer has positive sign and is silicon. The total integrated dose is 8.8e12 in this layer. From 0.26um down, the selected variable is negative. To a depth of 50um, the integrated value is about 5e12.

puts "The Junction Depth is [  interpolate silicon z=0.0]"

The above command uses the interpolate command to locate the zero crossing and report the value. For the structure above, the output is:

The Junction Depth is 2.629046e-01

Additional processing can be performed using the print.1d command.

set dep 0
foreach f [print.1d] {
    set x [lindex $f 0]
    set y [lindex $f 1]
    if {$y > 0.0} {incr dep}
}
puts $dep

Returns 227, the number of grid points that have a positive selected variable value. Other operations can be performed and are limited only by the tcl capabilities.

Interface Manipulations

Grid1D
 diffuse time=60 temp=1100 wet

The above two commands grow an oxide that will be used in the remaining examples.

set top [[[interfaceCommand | interface] oxide /gas]
set bot [[[interfaceCommand | interface] oxide /silicon]
puts "Thickness is [expr $bot - $top]"

The interface commands return the location of the interface. Since we can independently locate both the top and bottom, these can be subtracted to obtain the total oxide thickness. The total oxide thickness is 0.673907.

tclsel z = {$Oxidant}
layers

These two commands sel the oxidant and then integrate it across all material layers. The output is:

	 Top          Bottom        Integral    Material
-3.68495e-01     3.05413e-01     1.12857e 15    Oxide
 3.05413e-01     5.00000e 01     2.67928e 12    Silicon

The oxide layer thickness is 0.674, and the dose of oxidant contained in the layer is 1.1e15. The silicon has been consumed as expected.