Canali Velocity Saturation: Difference between revisions

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(New page: == Model == Below example would be used for velocity saturation along the channel of a MOSFET where "y" is the channel direction. proc mobility.canali { $Emob_low $Hmob_low } { set vsat...)
 
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Reference: C. Canali et al., (1975). "Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature," IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047.
Reference: C. Canali et al., (1975). "Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature," IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047.


INPUTS Required:  
;INPUTS Required:  
:1. mob_low - low field mobility
:1. mob_low - low field mobility
OUTPUT Terms:
;OUTPUT Terms:
:1. Emob_Canali - Electron Mobility
:1. Emob_Canali - Electron Mobility
:2. Hmob_Canali - Hole Mobility
:2. Hmob_Canali - Hole Mobility

Revision as of 18:04, 8 December 2008

Model

Below example would be used for velocity saturation along the channel of a MOSFET where "y" is the channel direction.

proc mobility.canali { $Emob_low $Hmob_low } {
set vsatn 1.07e7
set vsatp 8.37e6
set Emob_Canali "$Emob_low / (sqrt(1 + ($Emob_low*dot(DevPsi,y*1.0e-4) / $vsatn)^2))"
set Hmob_Canali "$Hmob_low / (sqrt(1 + ($Hmob_low*dot(DevPsi,y*1.0e-4) / $vsatp)^2))"
}

Notes

Reference: C. Canali et al., (1975). "Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature," IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047.

INPUTS Required
1. mob_low - low field mobility
OUTPUT Terms
1. Emob_Canali - Electron Mobility
2. Hmob_Canali - Hole Mobility