Device Tutorial: Difference between revisions

From Flooxs
Jump to navigation Jump to search
Line 6: Line 6:
* [[PN diode example (1D)]] - learn how to make doping profile (Doping=f(x,y,z))
* [[PN diode example (1D)]] - learn how to make doping profile (Doping=f(x,y,z))
* [[PMOS capacitor example (1D)]] - learn the metal contact boundary condition
* [[PMOS capacitor example (1D)]] - learn the metal contact boundary condition
* [[PN diode small-signal analysis (1D)]] - obtain conductance and current frequency-sweeps


== 2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas ==
== 2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas ==

Revision as of 23:36, 5 January 2016

It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example.


1D - Introducing the grid and the basic device equations and boundary conditions

2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas

3D - TecPlot, your computer's limitations, and the Quasi-Fermi Method