Device Examples: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
| Line 22: | Line 22: | ||
== BJT == | == BJT == | ||
* [[BJT (2D) - full deck]] | * [[BJT (2D) - full deck]] | ||
== AlGaN/GaN HEMT == | |||
* [[GaN Models Source file (2D) - full deck]] | |||
* [[T-Gate, ON state (2D) - full deck]] | |||
== Single-Event Effects == | == Single-Event Effects == | ||
Revision as of 16:41, 28 January 2014
Startup Script
- Startup Script - full - source from the bash command line
Resistor
- Resistor (1D) - full deck
- Resistor (2D) - full deck
- Resistor (3D) - full deck - Quasi-Fermi Method
P-N Diode
Bulk-Si MOSFET
FinFET
BJT
AlGaN/GaN HEMT
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)