Resistor example (1D): Difference between revisions
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== 1D Resistor Deck == | == 1D Resistor Deck == | ||
Create 1D struture [[Resistor example 1D - Create 1D structure explanation | explanation]] | Create 1D struture - [[Resistor example 1D - Create 1D structure explanation | explanation]] | ||
#Grid | #Grid | ||
line x loc=0.0 spac=0.1 tag=Top | line x loc=0.0 spac=0.1 tag=Top | ||
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contact name=GND Silicon xlo=0.9 xhi=1.1 add | contact name=GND Silicon xlo=0.9 xhi=1.1 add | ||
Declare solution variables [[Declare solution variables explanation | explanation]] | Declare solution variables - [[Declare solution variables explanation | explanation]] | ||
DevicePackage | DevicePackage | ||
solution add name=DevPsi pde solve negative damp | solution add name=DevPsi pde solve negative damp | ||
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solution add name=Hole pde solve !negative | solution add name=Hole pde solve !negative | ||
Define constants [[Resistor example 1D - Define constants explanation | explanation]] | Define constants - [[Resistor example 1D - Define constants explanation | explanation]] | ||
set T 300.0 | set T 300.0 | ||
set k 1.38066e-23 | set k 1.38066e-23 | ||
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set small 1.0e-10 | set small 1.0e-10 | ||
Ionized dopant profile [[Resistor example 1D - Ionized dopant profile explanation | explanation]] | Ionized dopant profile - [[Resistor example 1D - Ionized dopant profile explanation | explanation]] | ||
set Nd 1.0e19 | set Nd 1.0e19 | ||
set Na 1.0e15 | set Na 1.0e15 | ||
set Doping [expr {$Nd-$Na}] | set Doping [expr {$Nd-$Na}] | ||
Bulk Equations | Bulk Equations - [[Resistor example 1D - Bulk Equations explanation | explanation]] | ||
set eqnP "$eps * grad(DevPsi) + $Doping - Elec + Hole" | set eqnP "$eps * grad(DevPsi) + $Doping - Elec + Hole" | ||
set eqnE "ddt(Elec) - ($Emob) * $Vt * sgrad(Elec, DevPsi/$Vt)" | set eqnE "ddt(Elec) - ($Emob) * $Vt * sgrad(Elec, DevPsi/$Vt)" | ||
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pdbSetString Silicon Hole Equation $eqnH | pdbSetString Silicon Hole Equation $eqnH | ||
Contact Equations - [[Resistor example 1D - Ohmic contact procedure explanation | explanation]] | |||
proc OhmicContact {Contact} { | proc OhmicContact {Contact} { | ||
global Vt ni Nd Na | global Vt ni Nd Na | ||
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OhmicContact GND | OhmicContact GND | ||
Initial | Initial Conditions - [[Resistor example 1D - Initial conditions explanation | explanation]] | ||
#Bias Voltage on the Contacts | #Bias Voltage on the Contacts | ||
contact name=VSS voltage supply=0.0 | contact name=VSS voltage supply=0.0 | ||
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device | device | ||
DC solve / plot I-V as output [[Resistor example 1D - DC solve explanation | explanation]] | DC solve / plot I-V as output - [[Resistor example 1D - DC solve explanation | explanation]] | ||
set Win [CreateGraphWindow] | set Win [CreateGraphWindow] | ||
set bias 0.0 | set bias 0.0 |
Revision as of 21:51, 26 October 2010
This example shows how to create and simulate a simple 1D n-type resistor. After creating a 1D structure, we plot the output current as an external bias is applied. Once you run and understand this example, you should study the PN Diode example (1D).
New Concepts
- Creating a structure (i.e. grid) with 1 material
- Declaring the 3 basic device solution variables
- Declaring and using tcl variables (set, expr, $)
- Using a constant dopant profile
- Storing "Equation" strings in the parameter database (pdb)
- Using tcl procedures
- Initial conditions, guesses, and solves
- "Ramping," i.e. consecutive DC solves
1D Resistor Deck
Create 1D struture - explanation
#Grid line x loc=0.0 spac=0.1 tag=Top line x loc=1.0 spac=0.1 tag=Bottom mater add name=Silicon region Silicon xlo=Top xhi=Bottom init #Contacts contact name=VSS Silicon xlo=-0.1 xhi=0.1 add contact name=GND Silicon xlo=0.9 xhi=1.1 add
Declare solution variables - explanation
DevicePackage solution add name=DevPsi pde solve negative damp solution add name=Elec pde solve !negative solution add name=Hole pde solve !negative
Define constants - explanation
set T 300.0 set k 1.38066e-23 set q 1.619e-19 set Vt [expr {$k*$T/$q}] set ni 1.1e10 set esi [expr 11.8 * 8.85418e-14] set eps [expr $esi / $q] set Emob 350.0 set Hmob 150.0 set small 1.0e-10
Ionized dopant profile - explanation
set Nd 1.0e19 set Na 1.0e15 set Doping [expr {$Nd-$Na}]
Bulk Equations - explanation
set eqnP "$eps * grad(DevPsi) + $Doping - Elec + Hole" set eqnE "ddt(Elec) - ($Emob) * $Vt * sgrad(Elec, DevPsi/$Vt)" set eqnH "ddt(Hole) - ($Hmob) * $Vt * sgrad(Hole, -DevPsi/$Vt)" pdbSetDouble Silicon DevPsi DampValue $Vt pdbSetString Silicon DevPsi Equation $eqnP pdbSetString Silicon Elec Equation $eqnE pdbSetString Silicon Hole Equation $eqnH
Contact Equations - explanation
proc OhmicContact {Contact} { global Vt ni Nd Na pdbSetBoolean $Contact Elec Flux 1 pdbSetBoolean $Contact Hole Flux 1 pdbSetBoolean $Contact DevPsi Flux 1 pdbSetBoolean $Contact Elec Fixed 1 pdbSetBoolean $Contact Hole Fixed 1 pdbSetBoolean $Contact DevPsi Fixed 1 pdbSetDouble $Contact Elec Flux.Scale 1.619e-19 pdbSetDouble $Contact Hole Flux.Scale 1.619e-19 pdbSetString $Contact DevPsi Equation "$Nd - $Na - Elec + Hole" pdbSetString $Contact Elec Equation "DevPsi - $Vt*log((Elec)/$ni) -$Contact" pdbSetString $Contact Hole Equation "DevPsi + $Vt*log((Hole)/$ni) -$Contact" } OhmicContact VSS OhmicContact GND
Initial Conditions - explanation
#Bias Voltage on the Contacts contact name=VSS voltage supply=0.0 contact name=GND voltage supply=0.0 #Initial Guess at Zero Bias sel z=(-$Vt*log(-($Doping+$small)/$ni)) name=DevPsi sel z=$ni*exp(DevPsi/0.025) name=Elec sel z=$ni*exp(-DevPsi/0.025) name=Hole #DC Solve at Zero Bias device
DC solve / plot I-V as output - explanation
set Win [CreateGraphWindow] set bias 0.0 for {set bias 0.0} {$bias < 1.01} {set bias [expr $bias+0.1]} { contact name=VSS supply = $bias device set cur [expr abs([contact name=VSS sol=Elec flux] - [contact name=VSS sol=Hole flux])] AddtoLine $Win I $bias $cur }
Exercises
- This was an n-type resistor. Now make a p-type resistor.
Notes
This deck was successfully run by Nicole on 10/26/10 using TEC ~flooxs/linux64