Device Models: Difference between revisions
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* [[Defining Your Band Terms]] (Ec,Ev,Efp,Efn) | * [[Defining Your Band Terms]] (Ec,Ev,Efp,Efn) | ||
* [[Temperature-Dependent Bands]] | * [[Temperature-Dependent Bands]] | ||
* [[Band-Gap Narrowing]] (due to heavy doping > 1e17) | |||
=== Continuity Equations === | === Continuity Equations === | ||
Revision as of 20:37, 3 July 2010
Bulk Equations
Choose Your Statistics
Poisson's Equation
- Poisson's Equation
- Adding Ionized Dopants
- Incomplete Ionization (Temperature-dependence of Na and Nd))
Band Terms
- Defining Your Band Terms (Ec,Ev,Efp,Efn)
- Temperature-Dependent Bands
- Band-Gap Narrowing (due to heavy doping > 1e17)
Continuity Equations
- Static Species
- Diffusion
- Drift Diffusion (Scharfetter-Gummel)
- General Equation Builder (choose automatically between above 3 equations)
- Quasi-Fermi Method
Mobility
- Masetti Mobility Model
- Philips Unified Mobility Model
- Enhanced Lombardi Model
- Canali Velocity Saturation
Recombination-Generation
Boundary Conditions and Interfaces
General Discussion
Interfaces
Contact Physics
- Ohmic Contact
- Work-Function Difference (metal gate on a MOSFET)
- Schottky Contact
- Quasi-Fermi Contact
- Slotboom Contact
- Boundary Sink