Device Examples: Difference between revisions

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(New page: == Resistor == The following resistors offer a good introduction to creating and simulating a device in FLOOXS. * resistor example (1D) * resistor example (2D) == P-N Diode == Th...)
 
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== Other Useful Resources ==  
== Other Useful Resources ==  
The MIT "Well-Tempered" Bulk-Si MOSFET has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
* [http://www-mtl.mit.edu/researchgroups/Well/ "Well-Tempered" MOSFET]
* [http://www-mtl.mit.edu/researchgroups/Well/ "Well-Tempered" MOSFET]
The International Technology Roadmap for Semiconductors (ITRS)  
The International Technology Roadmap for Semiconductors (ITRS)  
* [http://www.itrs.net/reports.html ITRS Reports]
* [http://www.itrs.net/reports.html ITRS Reports]

Revision as of 21:36, 13 September 2008

Resistor

The following resistors offer a good introduction to creating and simulating a device in FLOOXS.

P-N Diode

The following diode examples build on the resistor examples where the differences are variable doping profiles and contact equations.

Bulk-Si MOSFET

FinFET

BJT

Other Useful Resources

The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.

The International Technology Roadmap for Semiconductors (ITRS)