Device Models: Difference between revisions
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== | == Boundary Conditions and Interfaces == | ||
=== General Discussion === | |||
* [[What does "Fixed" and Flux" mean?]] | |||
=== Interfaces === | |||
* [[Electrostatic Potential Continuous]] | |||
* [[Diffusion across an interface]] | |||
* [[Interface Trap Generation]] | |||
=== Contacts === | |||
* [[Ohmic Contact]] | * [[Ohmic Contact]] | ||
* [[Work-Function Difference]] (metal gate on a MOSFET) | * [[Work-Function Difference]] (metal gate on a MOSFET) | ||
Revision as of 20:34, 3 July 2010
Bulk Equations
Choose Your Statistics
Poisson's Equation
- Poisson's Equation
- Adding Ionized Dopants
- Incomplete Ionization (Temperature-dependence of Na and Nd))
Band Terms
- Defining Your Band Terms (Ec,Ev,Efp,Efn)
- Temperature-Dependent Bands
Continuity Equations
- Static Species
- Diffusion
- Drift Diffusion (Scharfetter-Gummel)
- General Equation Builder (choose automatically between above 3 equations)
- Quasi-Fermi Method
Mobility
- Masetti Mobility Model
- Philips Unified Mobility Model
- Enhanced Lombardi Model
- Canali Velocity Saturation
Recombination-Generation
Boundary Conditions and Interfaces
General Discussion
Interfaces
Contacts
- Ohmic Contact
- Work-Function Difference (metal gate on a MOSFET)
- Schottky Contact
- Quasi-Fermi Contact
- Slotboom Contact
- Boundary Sink