Device Examples: Difference between revisions
Jump to navigation
Jump to search
| Line 20: | Line 20: | ||
== Bulk-Si MOSFET == | == Bulk-Si MOSFET == | ||
* [[NMOS (2D) - Scharfetter Gummel Method]] | |||
== FinFET == | == FinFET == | ||
Revision as of 16:45, 18 May 2019
Updated FLOOXS Device Examples
Resistor
- Resistor (1D) - Scharfetter Gummel Method
- Resistor (1D) - Quasi Fermi Method
- Resistor (2D) - Scharfetter Gummel Method
- Resistor (2D) - Quasi Fermi Method
- Resistor (3D) - Scharfetter Gummel Method
- Resistor (3D) - Quasi Fermi Method
P-N Diode
- PN diode (1D) - Scharfetter Gummel Method
- PN diode (1D) - Quasi Fermi Method
- SRH PN Diode (1D) - Scharfetter Gummel Method
- SRH PN Diode (1D) - Quasi Fermi Method
- PN diode (2D) - Scharfetter Gummel Method
- PN diode (2D) - Quasi Fermi Method
- PN diode (3D) - Scharfetter Gummel Method
- PN diode (3D) - Quasi Fermi Method
Bulk-Si MOSFET
FinFET
BJT
AlGaN/GaN HEMT
Single-Event Effects
Old FLOOXS Device Examples
Startup Script
- Startup Script - full - source from the bash command line
Resistor
- Resistor (1D) - full deck
- Resistor (2D) - full deck
- Resistor (3D) - full deck - Quasi-Fermi Method
P-N Diode
- PN diode (1D) - full deck
- SRH PN Diode (1D) - full deck
- PN diode (2D) - full deck
- PN diode (3D) - full deck
Bulk-Si MOSFET
FinFET
BJT
AlGaN/GaN HEMT
- GaN Models Source file (2D) - full deck
- GaN Models Simple (2D) - full deck
- T-Gate Dimensions file (2D) - full deck
- T-Gate, ON state, Strain Contours & IV plot (2D) - full deck
- T-Gate, OFF state, Strain Contours & IV plot (2D) - full deck
- T-Gate, Electron Temp & Lattice Temp (2D) - full deck
- T-Gate, Electric Field (2D) - full deck
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)