Device Tutorial

It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example.

General Overview of Device Simulation

This section includes a general discussion of the governing differential equations commonly used in semiconductor device simulation (e.g. the Poisson and continuity equations) and how they are depicted in the FLOOXS Alagator script, as well as common methods for declaring boundary and initial conditions.

• Device Simulation Overview
• High Level Example: p/n Diode

1D - Introducing the grid and the basic device equations and boundary conditions

• Resistor example (1D) - create a grid, learn basic device equations (including bulk equations, the ohmic contact boundary condition, and initial guess procedure)
• PN diode example (1D) - learn how to make doping profile (Doping=f(x,y,z))
• PMOS capacitor example (1D) - learn the metal contact boundary condition
• PN diode small-signal analysis (1D) - obtain conductance and current frequency-sweeps

2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas

• Resistor example (2D) - how to add another dimension to the structure, visualizing the 2D grid
• PN diode example (2D) - plotting a solution variable in 1d on a 2d structure
• BJT example (2D) - important advanced models for BJT's (SRH, BGN, etc)
• PMOS capacitor example (2D) - learn about the 2DEG
• NMOS example (2D) - learn about where the Gas is
• Double-gate FinFET example (2D)

3D - TecPlot, your computer's limitations, and the Quasi-Fermi Method

• Resistor example (3D) - plotting the grid in TecPlot
• PN diode example (3D)
• PMOS capacitor example (3D)
• NMOS example (3D)