Device Examples: Difference between revisions
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= Updated FLOOXS Device Examples = | |||
== Resistor == | |||
* [[Resistor (1D) - Scharfetter Gummel Method]] | |||
* [[Resistor (1D) - Quasi Fermi Method]] | |||
* [[Resistor (2D) - Scharfetter Gummel Method]] | |||
* [[Resistor (2D) - Quasi Fermi Method]] | |||
* [[Resistor (3D) - Scharfetter Gummel Method]] | |||
* [[Resistor (3D) - Quasi Fermi Method]] | |||
== P-N Diode == | |||
* [[PN diode (1D) - Scharfetter Gummel Method]] | |||
* [[PN diode (1D) - Quasi Fermi Method]] | |||
* [[SRH PN Diode (1D) - Scharfetter Gummel Method]] | |||
* [[SRH PN Diode (1D) - Quasi Fermi Method]] | |||
* [[PN diode (2D) - Scharfetter Gummel Method]] | |||
* [[PN diode (2D) - Quasi Fermi Method]] | |||
* [[PN diode (3D) - Scharfetter Gummel Method]] | |||
* [[PN diode (3D) - Quasi Fermi Method]] | |||
== Bulk-Si MOSFET == | |||
* [[NMOS IV (2D) - Scharfetter Gummel Method]] | |||
== FinFET == | |||
== BJT == | |||
== AlGaN/GaN HEMT == | |||
== Single-Event Effects == | |||
= Old FLOOXS Device Examples = | |||
== Startup Script == | |||
* [[Startup Script - full]] - source from the bash command line | |||
== Resistor == | == Resistor == | ||
* [[Resistor (1D) - full deck]] | * [[Resistor (1D) - full deck]] | ||
* [[Resistor (2D) - full deck]] | * [[Resistor (2D) - full deck]] | ||
* [[Resistor (3D) - full deck]] - Quasi-Fermi Method | |||
== P-N Diode == | == P-N Diode == | ||
* [[PN diode (1D) - full deck]] | * [[PN diode (1D) - full deck]] | ||
* [[PN diode | * [[SRH PN Diode (1D) - full deck]] | ||
* [[PN diode | * [[PN diode (2D) - full deck]] | ||
* [[PN diode (3D) - full deck]] | |||
== Bulk-Si MOSFET == | == Bulk-Si MOSFET == | ||
* [[pMOS capacitor example (1D)]] | * [[pMOS capacitor example (1D)]] | ||
* [[nMOSFET | * [[nMOSFET (2D) - full deck]] | ||
* [[nMOSFET | * [[nMOSFET (3D) - full deck]] | ||
== FinFET == | == FinFET == | ||
* [[Double-gate FinFET | * [[Double-gate FinFET (2D) - full deck]] | ||
== BJT == | == BJT == | ||
* [[BJT | * [[BJT (2D) - full deck]] | ||
== AlGaN/GaN HEMT == | |||
* [[GaN Models Source file (2D) - full deck]] | |||
* [[GaN Models Simple (2D) - full deck]] | |||
* [[T-Gate Dimensions file (2D) - full deck]] | |||
* [[T-Gate, ON state, Strain Contours & IV plot (2D) - full deck]] | |||
* [[T-Gate, OFF state, Strain Contours & IV plot (2D) - full deck]] | |||
* [[T-Gate, Electron Temp & Lattice Temp (2D) - full deck]] | |||
* [[T-Gate, Electric Field (2D) - full deck]] | |||
== Single-Event Effects == | == Single-Event Effects == | ||
Latest revision as of 16:45, 18 May 2019
Updated FLOOXS Device Examples
Resistor
- Resistor (1D) - Scharfetter Gummel Method
- Resistor (1D) - Quasi Fermi Method
- Resistor (2D) - Scharfetter Gummel Method
- Resistor (2D) - Quasi Fermi Method
- Resistor (3D) - Scharfetter Gummel Method
- Resistor (3D) - Quasi Fermi Method
P-N Diode
- PN diode (1D) - Scharfetter Gummel Method
- PN diode (1D) - Quasi Fermi Method
- SRH PN Diode (1D) - Scharfetter Gummel Method
- SRH PN Diode (1D) - Quasi Fermi Method
- PN diode (2D) - Scharfetter Gummel Method
- PN diode (2D) - Quasi Fermi Method
- PN diode (3D) - Scharfetter Gummel Method
- PN diode (3D) - Quasi Fermi Method
Bulk-Si MOSFET
FinFET
BJT
AlGaN/GaN HEMT
Single-Event Effects
Old FLOOXS Device Examples
Startup Script
- Startup Script - full - source from the bash command line
Resistor
- Resistor (1D) - full deck
- Resistor (2D) - full deck
- Resistor (3D) - full deck - Quasi-Fermi Method
P-N Diode
- PN diode (1D) - full deck
- SRH PN Diode (1D) - full deck
- PN diode (2D) - full deck
- PN diode (3D) - full deck
Bulk-Si MOSFET
FinFET
BJT
AlGaN/GaN HEMT
- GaN Models Source file (2D) - full deck
- GaN Models Simple (2D) - full deck
- T-Gate Dimensions file (2D) - full deck
- T-Gate, ON state, Strain Contours & IV plot (2D) - full deck
- T-Gate, OFF state, Strain Contours & IV plot (2D) - full deck
- T-Gate, Electron Temp & Lattice Temp (2D) - full deck
- T-Gate, Electric Field (2D) - full deck
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)