Device Examples: Difference between revisions

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= Updated FLOOXS Device Examples =
== Resistor ==
* [[Resistor (1D) - Scharfetter Gummel Method]]
* [[Resistor (1D) - Quasi Fermi Method]]
* [[Resistor (2D) - Scharfetter Gummel Method]]
* [[Resistor (2D) - Quasi Fermi Method]]
* [[Resistor (3D) - Scharfetter Gummel Method]]
* [[Resistor (3D) - Quasi Fermi Method]]
== P-N Diode ==
* [[PN diode (1D) - Scharfetter Gummel Method]]
* [[PN diode (1D) - Quasi Fermi Method]]
* [[SRH PN Diode (1D) - Scharfetter Gummel Method]]
* [[SRH PN Diode (1D) - Quasi Fermi Method]]
* [[PN diode (2D) - Scharfetter Gummel Method]]
* [[PN diode (2D) - Quasi Fermi Method]]
* [[PN diode (3D) - Scharfetter Gummel Method]]
* [[PN diode (3D) - Quasi Fermi Method]]
== Bulk-Si MOSFET ==
* [[NMOS IV (2D) - Scharfetter Gummel Method]]
== FinFET ==
== BJT ==
== AlGaN/GaN HEMT ==
== Single-Event Effects ==
= Old FLOOXS Device Examples =
== Startup Script ==
* [[Startup Script - full]] - source from the bash command line
== Resistor ==
== Resistor ==
The following resistors offer a good introduction to creating and simulating a device in FLOOXS.
* [[Resistor (1D) - full deck]]
* [[Resistor example (1D)]]
* [[Resistor (2D) - full deck]]
* [[Resistor example (2D)]]
* [[Resistor (3D) - full deck]] - Quasi-Fermi Method


== P-N Diode ==
== P-N Diode ==
The following diodes build on the resistor examples where the differences are variable doping profiles and different contact equations.
* [[PN diode (1D) - full deck]]
* [[PN diode example (1D)]]
* [[SRH PN Diode (1D) - full deck]]  
* [[PN diode example (2D)]]
* [[PN diode (2D) - full deck]]
* [[PN diode example (3D)]]
* [[PN diode (3D) - full deck]]


== Bulk-Si MOSFET ==
== Bulk-Si MOSFET ==
* [[PMOS capacitor example (1D)]]
* [[pMOS capacitor example (1D)]]
* [[NMOS example (2D)]]
* [[nMOSFET (2D) - full deck]]
* [[NMOS example (3D)]]
* [[nMOSFET (3D) - full deck]]


== FinFET ==
== FinFET ==
* [[Double-gate FinFET example (2D)]]
* [[Double-gate FinFET (2D) - full deck]]


== BJT ==
== BJT ==
* [[BJT example (2D)]]
* [[BJT (2D) - full deck]]
 
== AlGaN/GaN HEMT ==
* [[GaN Models Source file (2D) - full deck]]
* [[GaN Models Simple (2D) - full deck]]
* [[T-Gate Dimensions file (2D) - full deck]]
* [[T-Gate, ON state, Strain Contours & IV plot (2D) - full deck]]
* [[T-Gate, OFF state, Strain Contours & IV plot (2D) - full deck]]
* [[T-Gate, Electron Temp & Lattice Temp (2D) - full deck]]
* [[T-Gate, Electric Field (2D) - full deck]]


== Single-Event Effects ==
== Single-Event Effects ==

Latest revision as of 16:45, 18 May 2019

Updated FLOOXS Device Examples

Resistor

P-N Diode

Bulk-Si MOSFET

FinFET

BJT

AlGaN/GaN HEMT

Single-Event Effects

Old FLOOXS Device Examples

Startup Script

Resistor

P-N Diode

Bulk-Si MOSFET

FinFET

BJT

AlGaN/GaN HEMT

Single-Event Effects

Other Useful Resources

The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.

The International Technology Roadmap for Semiconductors (ITRS)