Device Models: Difference between revisions

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* [[Defining Your Band Terms]] (Ec,Ev,Efp,Efn)
* [[Defining Your Band Terms]] (Ec,Ev,Efp,Efn)
* [[Temperature-Dependent Bands]]
* [[Temperature-Dependent Bands]]
* [[Band-Gap Narrowing]] (due to heavy doping > 1e17)


=== Continuity Equations ===
=== Continuity Equations ===
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== Contacts/Boundary Conditions ==
== Boundary Conditions and Interfaces ==


=== General Discussion ===
* [[What does "Fixed" and Flux" mean?]]
* [[Why Doesn't the Contact Recognize my Const Solution Variable?]]
=== Interfaces ===
* [[Electrostatic Potential Continuous]]
* [[Diffusion across an interface]]
* [[Interface Trap Generation]]
=== Contact Physics ===
* [[Ohmic Contact]]
* [[Ohmic Contact]]
* [[Work-Function Difference]] (metal gate on a MOSFET)
* [[Work-Function Difference]] (metal gate on a MOSFET)
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* [[Slotboom Contact]]
* [[Slotboom Contact]]
* [[Boundary Sink]]
* [[Boundary Sink]]
== Initial Guess ==
* [[Initial Guess]]

Latest revision as of 16:39, 5 January 2016