Device Tutorial: Difference between revisions
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(New page: It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example. == 1D - Introducing the grid and ...) |
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Revision as of 17:41, 9 November 2010
It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example.
1D - Introducing the grid and the basic device equations and boundary conditions
- Resistor example (1D) - create a grid, learn basic device equations (including bulk equations, the ohmic contact boundary condition, and initial guess procedure)
- PN diode example (1D) - learn how to make doping profile (Doping=f(x,y,z))
- PMOS capacitor example (1D) - learn the metal contact boundary condition
2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas
- Resistor example (2D)
- PN diode example (2D)
- BJT example (2D) - important advanced models for BJT's (SRH, BGN, etc)
- PMOS capacitor example (2D) - learn about the 2DEG
- NMOS example (2D) - learn about where the Gas is
- Double-gate FinFET example (2D)
3D - TecPlot, your computer's limitations, and the Quasi-Fermi Method
- Resistor example (3D) - plotting the grid in TecPlot
- PN diode example (3D)
- PMOS capacitor example (3D)
- NMOS example (3D)
Single-Event Effects
Other Useful Resources
The MIT "Well-Tempered" Bulk-Si MOSFET website has useful information (doping profiles, dimensions, etc.) for technology nodes of 90-nm and smaller.
The International Technology Roadmap for Semiconductors (ITRS)