Canali Velocity Saturation: Difference between revisions
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(New page: == Model == Below example would be used for velocity saturation along the channel of a MOSFET where "y" is the channel direction. proc mobility.canali { $Emob_low $Hmob_low } { set vsat...) |
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proc mobility.canali { $Emob_low $Hmob_low } { | proc mobility.canali { $Emob_low $Hmob_low } { | ||
set vsatn 1.07e7 | |||
set vsatp 8.37e6 | |||
set Emob_Canali "$Emob_low / (sqrt(1 + ($Emob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatn)^2))" | |||
set Hmob_Canali "$Hmob_low / (sqrt(1 + ($Hmob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatp)^2))" | |||
} | |||
or, with different exponents, | |||
proc mobility.canali { $Emob_low $Hmob_low } { | |||
set vsatn 1.07e7 | |||
set vsatp 8.37e6 | |||
set Emob_Canali "$Emob_low / ((1 + ($Emob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatn)^(1.109))^(1.0/1.109))" | |||
set Hmob_Canali "$Hmob_low / ((1 + ($Hmob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatp)^(1.213))^(1.0/1.213))" | |||
} | } | ||
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Reference: C. Canali et al., (1975). "Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature," IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047. | Reference: C. Canali et al., (1975). "Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature," IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047. | ||
INPUTS Required: | ;INPUTS Required: | ||
:1. mob_low - low field mobility | :1. mob_low - low field mobility | ||
OUTPUT Terms: | ;OUTPUT Terms: | ||
:1. Emob_Canali - Electron Mobility | :1. Emob_Canali - Electron Mobility | ||
:2. Hmob_Canali - Hole Mobility | :2. Hmob_Canali - Hole Mobility |
Latest revision as of 23:42, 29 June 2010
Model
Below example would be used for velocity saturation along the channel of a MOSFET where "y" is the channel direction.
proc mobility.canali { $Emob_low $Hmob_low } { set vsatn 1.07e7 set vsatp 8.37e6 set Emob_Canali "$Emob_low / (sqrt(1 + ($Emob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatn)^2))" set Hmob_Canali "$Hmob_low / (sqrt(1 + ($Hmob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatp)^2))" }
or, with different exponents,
proc mobility.canali { $Emob_low $Hmob_low } { set vsatn 1.07e7 set vsatp 8.37e6 set Emob_Canali "$Emob_low / ((1 + ($Emob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatn)^(1.109))^(1.0/1.109))" set Hmob_Canali "$Hmob_low / ((1 + ($Hmob_low*abs(dot(DevPsi,y*1.0e-4)) / $vsatp)^(1.213))^(1.0/1.213))" }
Notes
Reference: C. Canali et al., (1975). "Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature," IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047.
- INPUTS Required
- 1. mob_low - low field mobility
- OUTPUT Terms
- 1. Emob_Canali - Electron Mobility
- 2. Hmob_Canali - Hole Mobility