Device Tutorial: Difference between revisions
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(New page: It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example. == 1D - Introducing the grid and ...) |
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It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example. | It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example. | ||
For full decks see * [[Device Examples]] - full floods decks | |||
==General Overview of Device Simulation == | |||
This section includes a general discussion of the governing differential equations commonly used in semiconductor device simulation (e.g. the Poisson and continuity equations) and how they are depicted in the FLOOXS Alagator script, as well as common methods for declaring boundary and initial conditions. | |||
*[[Device Simulation Overview]] | |||
*[[High Level Example: p/n Diode]] | |||
== 1D - Introducing the grid and the basic device equations and boundary conditions == | == 1D - Introducing the grid and the basic device equations and boundary conditions == | ||
| Line 6: | Line 12: | ||
* [[PN diode example (1D)]] - learn how to make doping profile (Doping=f(x,y,z)) | * [[PN diode example (1D)]] - learn how to make doping profile (Doping=f(x,y,z)) | ||
* [[PMOS capacitor example (1D)]] - learn the metal contact boundary condition | * [[PMOS capacitor example (1D)]] - learn the metal contact boundary condition | ||
* [[PN diode small-signal analysis (1D)]] - obtain conductance and current frequency-sweeps | |||
== 2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas == | == 2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas == | ||
* [[Resistor example (2D)]] | * [[Resistor example (2D)]] - how to add another dimension to the structure, visualizing the 2D grid | ||
* [[PN diode example (2D)]] | * [[PN diode example (2D)]] - plotting a solution variable in 1d on a 2d structure | ||
* [[BJT example (2D)]] - important advanced models for BJT's (SRH, BGN, etc) | * [[BJT example (2D)]] - important advanced models for BJT's (SRH, BGN, etc) | ||
* [[PMOS capacitor example (2D)]] - learn about the 2DEG | * [[PMOS capacitor example (2D)]] - learn about the 2DEG | ||
| Line 20: | Line 27: | ||
* [[PMOS capacitor example (3D)]] | * [[PMOS capacitor example (3D)]] | ||
* [[NMOS example (3D)]] | * [[NMOS example (3D)]] | ||
Latest revision as of 13:04, 15 April 2019
It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example. For full decks see * Device Examples - full floods decks
General Overview of Device Simulation
This section includes a general discussion of the governing differential equations commonly used in semiconductor device simulation (e.g. the Poisson and continuity equations) and how they are depicted in the FLOOXS Alagator script, as well as common methods for declaring boundary and initial conditions.
1D - Introducing the grid and the basic device equations and boundary conditions
- Resistor example (1D) - create a grid, learn basic device equations (including bulk equations, the ohmic contact boundary condition, and initial guess procedure)
- PN diode example (1D) - learn how to make doping profile (Doping=f(x,y,z))
- PMOS capacitor example (1D) - learn the metal contact boundary condition
- PN diode small-signal analysis (1D) - obtain conductance and current frequency-sweeps
2D - Introducing advanced models for BJT's, 2DEG issues for MOS, and the Gas
- Resistor example (2D) - how to add another dimension to the structure, visualizing the 2D grid
- PN diode example (2D) - plotting a solution variable in 1d on a 2d structure
- BJT example (2D) - important advanced models for BJT's (SRH, BGN, etc)
- PMOS capacitor example (2D) - learn about the 2DEG
- NMOS example (2D) - learn about where the Gas is
- Double-gate FinFET example (2D)
3D - TecPlot, your computer's limitations, and the Quasi-Fermi Method
- Resistor example (3D) - plotting the grid in TecPlot
- PN diode example (3D)
- PMOS capacitor example (3D)
- NMOS example (3D)