|
|
(2 intermediate revisions by the same user not shown) |
Line 5: |
Line 5: |
| *[[Device Command | device]] - bias contacts and solve steady-state or transient | | *[[Device Command | device]] - bias contacts and solve steady-state or transient |
|
| |
|
|
| |
| =Steady-State=
| |
|
| |
| =Transient=
| |
|
| |
|
| =Small-signal analysis= | | =Small-signal analysis= |
| Sinusoidal Steady State Analysis is typically used to carry out small-signal analysis for extracting capacitance, transconductance, current-gain and cut-off frequencies. Even without energy balance/hydrodynamic model, accurate results can be obtained up to several GHz.
| | *[[Sinusoidal Steady State Analysis]] |
| Consider the symbolic representation of the 3 device equations: Poisson, electron and hole continuity equations.
| |
| | |
| [[File:Dev_eqn.png|200px]] | |
| | |
| The dot term represents the time derivative component of the electron and hole electron continuity equations.
| |
| Sinusoidal Steady State Analysis (S3A) solves the device equation system in the frequency domain as a steady state perturbed by an infinitesimal signal. The small signal assumption allows linearization of the device around the DC bias point. The corresponding Jacobian takes the symbolic form: | |
| | |
| [[File:matrix.png|300px]]
| |
| | |
| which is a 3Nx3N matrix (for 3 solution variables and N nodes). Notice the imaginary frequency dependent components in the electron and hole rows corresponding to the time derivative dot term in the continuity equation.
| |
| The matrix equation now takes a form slightly different to the steady-state form JX=B.
| |
| | |
| [[File:matrix_eqn.png|130px]]
| |
| | |
| where J remains the steady-state Jacobian at the desired DC-bias point, D is now a diagonal matrix with zeros for Poisson rows and ω=2πf for diagonal elements of continuity rows. Both are 3Nx3N matrices. X is solution vector and B is boundary condition vector.
| |
| For computational reasons(i.e. seperating real and imaginary terms), the matrix system takes the following 6Nx6N form
| |
| | |
| [[File:final_matrix_eqn.png|200px]]
| |
| | |
| where XR and XI are real and imaginary components of the solution variables.
| |
| | |
| ==== Examples ====
| |
| device
| |
| contact name=VSS voltage supply=1.0 acreal
| |
| contact name=VSS voltage supply=0.0 acimag
| |
| device freq=100
| |
| | |
| First device does a steady-state solution at previously provided bias point.
| |
| Setting "real" supply to unity would be recommended as response is linear (also convenient for obtaining conductance).
| |
| Small-signal of 100 Hz is applied at the chosen contact.
| |
| | |
| For a highly doped resistor, consider just electron current.
| |
| | |
| set Re_cur ([contact name=VSS sol=Elec flux acreal])]
| |
| set Im_cur ([contact name=VSS sol=Elec flux acimag])]
| |
| | |
| As expected for low resistance, real current Re_cur will be high and imaginary current Im_cur due to capacitive component will be extremely low.
| |