File:Gaussian Implant Profile.png: Difference between revisions
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(Process Examples - Simple Diode Implant Profile of silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um. ) |
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Latest revision as of 15:55, 5 May 2015
Process Examples - Simple Diode
Implant Profile of silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um.
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
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| current | 15:55, 5 May 2015 |  | 570 × 577 (25 KB) | Maddie (talk | contribs) | Process Examples - Simple Diode Implant Profile of silicon diode with a constant p-type doping of 1e16 and an n-type Gaussian w/ peak concentration of 1.0e20 and a junction depth of 0.1um. |
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