Process Solves

FLOOPS Specific Commands

These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected.

• defect - specify parameters that control the properties of the defects
• deposit - deposit a new material
• diffuse - simulate all types of thermal steps, including anneals, oxidations, and silicidations
• rta - simulate a rapid thermal anneal by specifying dwell temperature/time, and ramp/cool down rates
• dopant - specify parameters that control the properties of the dopants
• etch - use with a specific etch machine to evolve the surface according to the type of etching specified
• loop - allows the specification of dislocation loop parameters and models
• machine - used to specify the etch and deposit rates and types for different materials during a single named etch. The defined machine can then be used during a specific deposition and etch statement.
• oxide - specify the oxidation parameters for wet and dry oxidations
• silicide - specify parameters that control the properties of silicidation
• strip - this command removes a specified surface material in its entirety
• trap - specify the parameters for point defect bulk traps
• gate etch -